Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Patterned diamond particle films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 8187-8191 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article reports on a technique for patterning diamond nanogrit which utilizes commercial ink-jet printer technology. Diamond nanogrit as small as 50 nm has been successfully printed onto substrates of glass, silicon, copper, and fused quartz. The technique has been used to demonstrate a quick and simple means to seed patterned. nanocrystalline diamond films onto candidate substrates of potentially any conceivable size or shape. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373516
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Field emission properties of diode devices based on amorphic diamond-Si heterojunctions (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 1505-1508 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Microscopic and macroscopic field emission properties of amorphic diamond films on n- and p-type silicon substrates were studied by combined scanning tunneling microscopy/spectroscopy and integral field emission I–V measurements. Microscopic scanning tunneling spectroscopy showed that amorphic diamond films on n-Si have lower threshold voltage and higher emission current than amorphic diamond films on p-Si. The observed rectification characteristics suggest that amorphic diamond on n-Si is an ideal forward-biased p-n junction cold cathode emitter; however, there is no significant difference between these two structures by integral field emission I–V measurements. Conversion of the smooth amorphic diamond film into porous sp3/sp2 composites with sharp features under electric fields higher than 50 V/μm, followed by preferred electron emission from the porous composite sites of high transconductance, was believed to be the cause. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363915
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Negative electron affinity observed in boron-doped p-type diamond films by scanning field emission spectroscopy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6809-6812 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Field emission properties of boron-doped diamond films were studied by combined scanning tunneling microscopy/spectroscopy and scanning field emission spectroscopy. A detailed spatial correlation between field emission sites and diamond morphology, surface work function, and diamond quality can be established by this technique. A possible indication of negative electron affinity of the (111) faces near the (111)/(111) and (111)/(100) grain boundaries and high defect sites of boron doped p-type diamond films were observed by field emission I–V (current–voltage) measurement. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363809
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Field emission properties of diamond films of different qualities (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2337-2339 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Field emission properties of diamond films were studied by macroscopic I–V measurement. A lower turn-on field and a higher emission current were observed for diamond films produced by higher methane concentration, or with higher density of defects, introduced by ion implantation. However, diamond films of poorer quality experience a severe reliability problem. Cold implantation followed by rapid thermal or laser annealing produced diamond emitters with a turn-on field as low as 5 V/μm and the desired reliability. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120024
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Growth and field emission properties of multiply twinned diamond films with quintuplet wedges (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2825-2827 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A unique microwave plasma chemical vapor deposition (MPCVD) technique was employed to produce multiply twinned diamond films with quintuplet wedges. Biased nucleation, nonbiased growth, and high methane/hydrogen ratio ((approximately-greater-than)5%) were used to prepare the multiply twinned diamond films. The growth parameter α was carefully controlled to be close but larger than 3/2 to allow the multiply twinned particles with quintuplets to outgrow the parent face to form the secondary crystals with uniformly distributed particle sizes and smooth surface. Since there is no need to suppress the natural growth of twins in vapor-grown diamond, higher growth rate was achieved. Excellent field emission properties of such films compared to the normal MPCVD diamond films were also obtained. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117331
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...