Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    The adsorption and reactions of NO on Ag(111) at 80 K (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 91 (1989), S. 5701-5706 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The adsorption of NO on Ag(111) at 80 K has been studied by high resolution electron energy loss spectroscopy (HREELS) and thermal desorption spectroscopy (TDS). At low exposures (≤0.05 L) NO is adsorbed in part dissociatively and in part molecularly in two different threefold bridge states (in upright and bent or tilted orientation with respect to the surface normal). The NO molecules in the threefold bridge position are desorbed at 100 K. With increasing exposure the desorption temperature shifts gradually to 110 K. At medium exposures (∼0.13 L) additional NO is adsorbed molecularly in an atop position with an upright orientation in admixture with atomic N and O and molecular NO adsorbed in threefold bridge states. The NO molecules adsorbed in atop position are weakly bonded on the surface and are desorbed at about 90 K. Simultaneously, N2O is formed and adsorbed on the surface. At saturation a new bent or tilted NO species in atop position appears on the surface and the amount of N2O significantly increases. The N2O molecules are desorbed at 90, 110, and 190 K. At saturation all the NO and NO-derived species (the threefold bridge and atop states, N2O and atomic oxygen and nitrogen) coexist on Ag(111).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.457524
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Photodesorption of NO from Ag(111) and Cu(111) (1991)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 95 (1991), S. 1385-1399 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The adsorption, thermal reactions, and photoreactions of NO on Ag(111) and Cu(111) at 80–85 K have been studied by thermal-desorption spectroscopy (TDS), high-resolution electron-energy-loss spectroscopy (HREELS), and photon-induced desorption. Adsorption of NO on both surfaces is quite complicated. At saturation coverage, a number of chemical species are present, including atop and bridge-bonded NO, atomic N and O, and N2O. Photodesorption of NO, N2, and N2O is observed simultaneously under low-power photon irradiation in the wavelength range for 260–600 nm. From TD and HREEL spectra before and after photon irradiation, it is established that on both surfaces the atop NO is photoactive. Photon polarization, power-, and wavelength-dependences studies indicate that the mechanisms for photodesorption are nonthermal. A substrate-mediated mechanism involving photogenerated carriers at low photon energies (〈3 eV) and a direct excitation mechanism of the adsorbate-surface complex at high photon energies are used to explain the observed photodesorption.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.461120
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Formation of thin AlN films on NiAl(001) upon thermal decomposition of ammonia (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5718-5724 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation of thin AlN films on NiAl(001) has been studied by means of high resolution electron energy loss spectroscopy (HREELS), low-energy electron diffraction (LEED), and Auger electron spectroscopy. The AlN films were grown by the adsorption of NH3 on NiAl(001) at T=80 K and subsequent thermal decomposition at elevated temperatures. After annealing to T=1250 K, a distinct LEED pattern appears which exhibits pseudo-twelvefold symmetry. This indicates the formation of two hexagonal domains of AlN which are rotated by 90° with respect to each other. HREEL spectra of the ordered AlN film show a Fuchs–Kliewer phonon mode at 865 cm−1 in good agreement with theoretical spectra calculated on the base of the dielectric theory. The electronic energy gap of the thin AlN films is determined to be Eg(approximately-equal-to)6.1 eV. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359215
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Preparation and characterization of thin, well-ordered aluminum oxynitride films on NiAl(001) (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6467-6473 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We deal with the formation of thin aluminum oxynitride (AlON) layers after adsorption of nitric oxide (or coadsorption of oxygen and ammonia) on NiAl(001) at 75 K and subsequent annealing at 1200 K. The adsorption of NO and formation of the AlON films are investigated by means of high-resolution electron energy loss spectroscopy (HREELS), low-energy electron diffraction (LEED), and Auger electron spectroscopy (AES). The AlON film shows a distinct (2×1) LEED pattern and the HREEL spectrum exhibits five loss peaks. An oxygen to nitrogen atomic ratio of (approximately-equal-to)2 has been estimated from the AES analysis. The energy gap is determined to be Eg=6.6±0.2 eV. The structure of θ-AlON is derived from that of θ-Al2O3. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363666
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    A combined scanning tunneling microscopy and electron energy loss spectroscopy study on the formation of thin, well-ordered β-Ga2O3 films on CoGa(001) (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 2533-2538 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation of thin, well-ordered β-Ga2O3 films on CoGa(001) was studied by means of high resolution electron energy loss spectroscopy (EELS), scanning tunneling microscopy (STM), low-energy electron diffraction (LEED), and Auger electron spectroscopy. The crystalline β-Ga2O3 films on CoGa(001) are prepared upon adsorption of O2 at 300 K and subsequent annealing at 700 K or by oxidation of the sample directly at 700 K, respectively. EEL spectra of these films exhibit Fuchs–Kliewer modes at 305, 455, 645, and 785 cm−1 in good agreement with calculated spectra using the IR parameters of Ga2O3. The band gap was determined to be 4.5±0.2 eV. In addition, a gap state at 3.3 eV was found. The observed LEED pattern of β-Ga2O3/CoGa(001) can be explained by a (2×1) structure in two perpendicularly oriented domains. STM images exhibit atomically flat and large oxide terraces (up to 2500×700 Å2) mainly of rectangular shape. STM pictures with atomic resolution confirm the (2×1) structure. In addition, a square substructure can be observed which is related to the closed-packed oxygen lattice of β-Ga2O3. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367014
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Influence of the scattered electrons from the interchannel web of a multichannel-plate detector on the resolution and the background of an electron energy analyzer (1986)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 57 (1986), S. 2893-2895 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The background of an electron energy analyzer with a position-sensitive detector based on microchannel plates is reduced by installing a biased grid in front of the channel plate. The scattered electrons from the interchannel web of the detector are removed when the grid is positively biased with respect to the face of the channel plate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1139012
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Long rectangular islands of β-Ga2O3 on CoGa(001)—studied by electron energy loss spectroscopy and scanning tunneling microscopy (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 3440-3442 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: At 700 K, the oxidation with 1 L O2 of CoGa(001) was investigated by means of high-resolution electron energy loss spectroscopy (EELS), low-energy electron diffraction, Auger electron spectroscopy, and scanning tunneling microscopy (STM). Oxidation with 1 L O2 at 700 K leads to the formation of long, rectangular islands of β-Ga2O3 oriented in the [100] and [010] directions of the substrate. EEL spectra of the islands of β-Ga2O3 show intense Fuchs–Kliewer (FK) modes at 305, 455, 645, and 780 cm−1. The β-Ga2O3 islands are well ordered and show a (2×1) structure with two domains, oriented perpendicular to each other. The two-dimensional lattice parameters of β-Ga2O3 are determined to be a=2.8±0.1 Å and b=5.8±0.1 Å. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121659
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Band gap of amorphous and well-ordered Al2O3 on Ni3Al(100) (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 4139-4141 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The vibrational and electronic properties of amorphous and well-ordered alumina formed on Ni3Al(100) were investigated using high-resolution electron energy loss spectroscopy. The structure of well-ordered alumina was analyzed by low-energy electron diffraction. The amorphous Al2O3 films are prepared by adsorption of O2 at room temperature, while the well-ordered Al2O3 are obtained by direct oxidation of Ni3Al at 1150 K. The band gap energy is ∼3.2 and ∼4.3 eV for amorphous alumina and well-ordered alumina thin films respectively. The lowering of the band gap with respect to the bulk value of Al2O3 is associated with defect-induced states located in the band gap. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1380403
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Electron impact overtone excitation via the 2Σu resonance in N2 films physisorbed on Ag(110) at 15 K (1998)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 108 (1998), S. 2251-2260 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The growth and structure of solid nitrogen films on Ag(110) at 15 K was investigated by means of high resolution electron energy loss spectroscopy (EELS), thermal desorption spectroscopy (TDS), and low energy electron diffraction (LEED). The N2 film exhibits a parallelogram structure in the monolayer. For the bilayer and multilayers an incoherent hexagonal structure has been found. The dynamics of the resonant vibrational excitation of the N2 molecule via the 2Σu resonance is studied in detail both by the EELS method (as a function of the surface coverage) and theoretically. This allows a discussion of the effect of the adsorption on the vibrational excitation process and, in particular, on the overtone excitation. The 2Σu resonance excitation process is found to be almost not influenced by the adsorption in strong contrast with the case of the low energy (2Πg) N2 resonance. The differences between these two processes are discussed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.475606
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Adsorption and reactions of NO on NiAl(111) at 75 K (1997)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 107 (1997), S. 7459-7466 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The adsorption and reactions of NO on NiAl(111) at 75 K were studied by high resolution electron energy loss spectroscopy, temperature programmed desorption, Auger electron spectroscopy, and low energy electron diffraction. At low exposure (≤1 L), NO mainly adsorbs molecularly on top in an upright geometry on Ni atoms. Simultaneously, a small amount of NO dissociates. Higher exposures (≥2 L up to saturation) lead to the formation of a thin amorphous Al-oxynitride (am-ALON) film. In the presence of am-ALON, a molecular adsorption of NO on am-ALON sites and/or in the neighborhood of ALON islands is observed. Besides the upright geometry, NO molecules are adsorbed in disarranged (bent or tilted) configurations. The growing am-ALON film acts as a catalyst for the reduction of NO to N2O. Substantial amounts of N2O are formed for NO exposures higher than 5 L, and are coadsorbed molecularly. The main thermal desorption products are N2O, N2, and NO. For an exposure of 20 L NO, the ratios of the amounts of desorbing molecules are: N2O:N2:NO=1:0.43:0.36. It could be shown that the N2 signal is due to a recombinative desorption of adsorbed nitrogen atoms. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.474984
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...