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  • 1
    Electronic Resource
    Electronic Resource
    Pyrolysis of allene and propyne behind reflected shocks (1976)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 80 (1976), S. 2437-2443 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100563a001
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  • 2
    Electronic Resource
    Electronic Resource
    Mechanism of the high temperature decomposition of propane (1975)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 79 (1975), S. 686-692 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100574a004
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  • 3
    Electronic Resource
    Electronic Resource
    Structural isomerization allene .dblarw. propyne. Studies with a single pulse shock tube (1975)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 79 (1975), S. 1148-1152 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100579a002
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  • 4
    Electronic Resource
    Electronic Resource
    Energetics of surface reactions on (100) diamond plane (1992)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 96 (1992), S. 1868-1875 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100183a065
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Catalytic etching of platinum foils and thin films in hydrogen-oxygen mixtures (1988)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 92 (1988), S. 5731-5738 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100331a037
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  • 6
    Electronic Resource
    Electronic Resource
    Analysis of cyclic deposition of diamond (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 7132-7136 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A cyclic process of diamond deposition was investigated using a detailed surface kinetic model. The process modeled in this study was comprised of two alternating steps: a growth period in a methane-helium mixture, and an etching period in a hydrogen-oxygen-helium mixture. The model included a detailed description of gas-surface reactions in terms of elementary chemical steps. Experimental data available in the literature were simulated first and a fair agreement was obtained between the model and experiment. The model was then subjected to an analysis by varying the time periods of the cycle. The computational results predict a significant increase in the average growth rate of diamond films containing low sp2 carbon component for shorter total cycles, and longer the growth period of the cycle.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349796
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  • 7
    Electronic Resource
    Electronic Resource
    Monte Carlo simulation of diamond growth by methyl and acetylene reactions (1992)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 97 (1992), S. 5794-5802 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A dynamic Monte Carlo technique was applied to gas-surface reactions simulating diamond growth under chemical vapor deposition. A combined methyl-and-acetylene reaction mechanism was assumed, where the additions of methyl radicals and acetylene molecules are allowed to occur only when no steric interferences arise. The sterically resolved computations demonstrate nonlinear kinetic coupling: methyl and acetylene additions occur simultaneously and interdependently on each other−adsorption of CH3 creates sites for C2H2 addition, and addition of C2H2 creates sites for CH3 adsorption. It is also shown that the incorporation of acetylene by three-center additions only, irreversible on physical grounds, is capable of explaining the rate of diamond growth, thus dismissing the argument of reaction reversibility advanced against our proposed mechanism of acetylene addition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.463738
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  • 8
    Electronic Resource
    Electronic Resource
    Formation of silicon carbide particles behind shock waves (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1430-1432 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation of silicon carbide powder in a 3% SiH4-3% CH4-Ar mixture was studied in a shock tube. The experiments were conducted at the temperature of 800–3650 K, pressures of 0.46–4.16 atm, and reaction times of 1–2 ms. The progress of reaction was monitored by the attenuation of a He-Ne (633 nm) laser beam. Powders collected at the end wall of the tube were identified to be β-SiC and at high temperatures contained particles having sizes up to 0.5 μm. The large particles had the form of thin single-crystal platelets with hexagonal and truncated triangular shapes. The transmitted laser light intensity as a function of reaction time exhibited a pronounced minimum at incident shock temperatures above 1700 K. A reaction model is proposed that explains the experimental observations. It is postulated that SiC particles are nucleated homogeneously, along with Si particles. The latter are etched by the products of methane pyrolysis and the chemical species formed by the etching add to the growth of SiC particles.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100688
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  • 9
    Electronic Resource
    Electronic Resource
    The role of hydrogen in vapor deposition of diamond (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 5142-5149 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of hydrogen addition on growth of diamond films under the conditions of chemical vapor deposition was investigated computationally. A detailed chemical kinetic mechanism was composed to describe the evolution of reaction species in pyrolysis of hydrogen- and argon-diluted methane mixtures with imposed temperature profiles, simulating the gas-phase conditions of diamond film growth in an idealized hot-filament reactor. The reaction mechanism was comprised of two basic parts: decomposition of methane, and formation and growth of polycyclic aromatic hydrocarbons; it contained a total of 120 elementary reactions and 45 chemical species. The reaction rate coefficients included temperature and pressure dependencies. The computations were performed for a variety of initial conditions, elucidating the effects of critical parameters on the product composition in the regime of diamond deposition. Analysis of the computational results indicated that the key role of the hydrogen addition in the diamond deposition process is to suppress the formation of aromatic species by H2 in the gas phase and thereby to prevent the formation and growth of nondiamond, graphitic phases on the deposition surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343193
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  • 10
    Electronic Resource
    Electronic Resource
    Oxygen poisoning of diamond film growth (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2641-2643 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diamond films were deposited by a cyclic growth-etch process for up to 72 h. Initial growth rates are typical for the deposition of quality diamond films by continuous process chemical vapor deposition, however, they show a distinct decline as growth progresses. The films show a crystalline faceting characteristic of good quality diamond, but the intensity of the 1332 cm−1 diamond Raman band decreases after 10 h of growth, with a loss of all characteristic carbon Raman bands at 72 h of growth. The present cycling experiments differ from typical continuous diamond deposition processes in that the gas phase composition during the etching cycle is significantly richer in OH, O, and H. Oxygen is proposed to poison the growing surface by forming strongly chemisorbed sites which are trapped in the growing film. Defective carbon deposited above the trapped oxygen etches rapidly in subsequent cycles, and the buildup of such trapped oxygen defects may account for the observed decline in growth rate and quality.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110767
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