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  • 1
    Electronic Resource
    Electronic Resource
    Study of vibrational modes of gold nanostructures by picosecond ultrasonics (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 37-45 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used picosecond ultrasonics techniques to study the vibrations of several nanostructures composed of laterally patterned gold films on fused quartz substrates. The structures include arrays of stripes and dots with lateral repeat distance as small as 2000 A(ring). The frequencies and attenuation rates of the low-lying normal modes of these structures are measured. We compare these results with those obtained theoretically from a finite element analysis of the dynamics of the structures, and discuss the physical nature of the principal vibrational modes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353859
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  • 2
    Electronic Resource
    Electronic Resource
    On the Dodson–Tsao excess stress for glide of a threading dislocation in a strained epitaxial layer (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2054-2056 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The concept of excess stress was originally introduced in a study of elastic strain relaxation in an epitaxial layer grown beyond its critical thickness, where it was proposed as the relevant stress in a kinetic law for dislocation motion. The concept has subsequently been applied in a variety of studies of strain relaxation, but without a standard definition as a basis for quantitative comparisons. The purpose here is to propose a fundamental definition of excess stress as the particular stress measure which is work-conjugate to the Burgers displacement during glide of a threading dislocation in a strained layer. This definition also has the feature of being consistent with definitions of effective stress in kinetic laws of glide in bulk materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351154
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  • 3
    Electronic Resource
    Electronic Resource
    A criterion for arrest of a threading dislocation in a strained epitaxial layer due to an interface misfit dislocation in its path (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2073-2080 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In a strained layer grown epitaxially on a substrate, the motion of a dislocation on any particular glide plane in the layer can be influenced by the presence of dislocations on other glide planes. The focus here is on the glide of a dislocation extending from the free surface of the layer to the layer-substrate interface, the so-called threading dislocation. A general definition of driving force for glide of a threading dislocation in a nonuniform stress field is adopted to calculate the driving force on a threading dislocation due to an encounter with an interface misfit dislocation on an intersecting glide plane. The result is examined in detail for the case of cubic materials, taking into account different combinations of Burgers vectors. The analysis makes it clear that the misfit dislocation forces the threading dislocation to glide through a channel of width less than the full layer thickness. A blocking criterion is proposed, based on the presumption that blocking will occur if the channel width is less than the critical thickness for the local reduced strain. The results indicate that this effect can be significant in blocking the glide of a threading dislocation, depending on the mismatch strain magnitude and the layer thickness.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346560
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  • 4
    Electronic Resource
    Electronic Resource
    Model for stress generated upon contact of neighboring islands on the surface of a substrate (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4866-4873 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In the early stage of growth of a metal film on a substrate by the Volmer–Weber mechanism, a tensile stress in the film is observed to arise at about the point in the process when islands of deposited material begin to coalesce. The mechanism commonly proposed as the origin of this tensile stress is that the coalescing islands deform in order to form a relatively low energy grain boundary, at the expense of some surface energy by surface area reduction, and that this proceeds until a stress is generated that has magnitude sufficient to prevent further area reduction. Several models have been proposed for this process, but the inferred tensile stress estimates have been much larger than observed stress magnitudes in many cases. The purpose here is to introduce a model for the process based on the theory of contact of elastic solids with cohesion. A description of the process is developed on this premise for one-dimensional, two-dimensional, and three-dimensional states of deformation of coalescing islands. It is found that the latter case leads to an estimate of film stress generally consistent with observations. The features of the model for different dimensionalities are compared and contrasted with each other, as well as with other models which have been proposed for this process. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1359437
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  • 5
    Electronic Resource
    Electronic Resource
    Role of dislocation blocking in limiting strain relaxation in heteroepitaxial films (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7280-7287 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The residual strain following relaxation in a variety of Si1−xGex heteroepitaxial films grown on (001) Si wafers has been compared with the values of residual strain predicted by the theory based on the incremental movements of isolated threading dislocation segments. It is found that for very thin films (40–500 nm) the measured residual strains after relaxation are significantly higher than the values predicted by this theory. For thicker films, the residual strains are very close to the predicted values. The effect of the interactions of parallel dislocations on the residual strain are investigated using the model developed by Willis, Jain, and Bullough [Philos. Mag. A 62, 115 (1990)] for a two-dimensional array of dislocations. It is found that the experimental data cannot be explained by this model since it predicts even lower values of residual strain than the model based on isolated threading segments. The residual strains are also compared with predictions based on Freund's treatment of the blocking of a moving threading segment by an orthogonal misfit dislocation present in its path [J. Appl. Phys. 68, 2073 (1990)]. It is found that Freund's blocking criterion gives a very good account of the residual strain in Si1−xGex films. Blocking of threading dislocations by other misfit dislocations appears to play an important role in the late stage of strain relaxation in these structures and thus may limit the possibility of obtaining fully relaxed films with low threading dislocation densities. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358013
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  • 6
    Electronic Resource
    Electronic Resource
    A lower bound on implant density to induce wafer splitting in forming compliant substrate structures (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3519-3521 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The physical system under study is a bonded semiconductor wafer into which hydrogen ions have been implanted within a planar zone, typical of a configuration used in forming semiconductor-on-insulator compliant substrates by wafer splitting. Under the assumption that splitting is a consequence of crack growth driven by hydrogen gas pressure, a lower bound estimate of the implant density required for large area crack growth is obtained which, for an ideal gas, depends only on the cohesive strength of the material and on temperature. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119219
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  • 7
    Electronic Resource
    Electronic Resource
    Critical thickness condition for growth of strained quantum wires in substrate V-grooves (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2822-2824 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The physical system under study is a quantum wire of roughly triangular cross section grown epitaxially in a V-shaped groove on a patterned (100) surface of a cubic substrate. The walls of the groove are {111} planes of the substrate material, so that the wire extends along a 〈110〉 direction. For a given thickness, or depth, of the wire, an analysis is presented which leads to an estimate of the smallest elastic mismatch strain for which the wire remains stable against formation of misfit dislocations, in the spirit of the Matthews-Bladeslee condition, taking into account both the free surface effect and the mismatch strain effect. Comparison is made with the experimental observations of T. Arakawa, S. Tsukamoto, Y. Nagamune, M. Nishioka, J.-H. Lee, and Y. Arakawa [Jpn. J. Appl. Phys. 32, L1377 (1993)]. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113487
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  • 8
    Electronic Resource
    Electronic Resource
    Extensions of the Stoney formula for substrate curvature to configurations with thin substrates or large deformations (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1987-1989 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two main assumptions which underlie the Stoney formula relating substrate curvature to mismatch strain in a bonded thin film are that the film is very thin compared to the substrate, and the deformations are infinitesimally small. Expressions for the curvature–strain relationship are derived for cases in which these assumptions are relaxed, thereby providing a basis for interpretation of experimental observations for a broader class of film–substrate configurations. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123722
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  • 9
    Electronic Resource
    Electronic Resource
    A critical thickness condition for a strained compliant substrate/epitaxial film system (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 173-175 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The physical system under study is a single crystal film grown epitaxially on a substrate of comparable thickness which is constrained to remain flat. In general, the layers are strained due to a mismatch in lattice parameter between the film and substrate materials. The free energy change of the system due to formation of strain-relaxing interface misfit dislocations is estimated, and the discriminating case of zero energy change leads to a critical thickness condition on mismatch strain, film thickness, substrate thickness, and crystallographic slip orientation which is necessary for the spontaneous formation of such dislocations. The condition obtained generalizes the Matthews–Blakeslee (MB) criterion for a thin film on a thick substrate to the case of a complaint substrate/epitaxial film system, and it reduces to the MB criterion when either the film or substrate is relatively thick. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117362
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  • 10
    Electronic Resource
    Electronic Resource
    Strain induced stabilization of stepped Si and Ge surfaces near (001) (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 364-366 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on calculations of the formation energies of several [100] and [110] oriented step structures on biaxially stressed Si and Ge (001) surfaces. It is shown that a novel rebonded [100] oriented single-height step is strongly stabilized by compressive strain compared to most well-known step structures. We propose that the side walls of "hut"-shaped quantum dots observed in recent experiments on SiGe/Si films are made up of these steps. Our calculations provide an explanation for the nucleationless growth of shallow mounds, with steps along the [100] and [110] directions in low- and high-misfit films, respectively, and for the stability of the (105) facets under compressive strain. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1491611
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