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  • 1
    Electronic Resource
    Electronic Resource
    Characterization of SrS evaporated materials grown from a new high temperature source with a carbon heater (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 1505-1508 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Strontium sulfide (SrS) was used as the evaporant material to prepare the phosphor layer for a blue electroluminescent (EL) element. SrS evaporation was performed by using a resistively heated carbon heater. No heat treatment of the phosphor layer after deposition was made. A crucible temperature of more than 1400 °C was obtained in this evaporation system which makes this system equally applicable for the evaporation of other materials with high melting temperature. Cerium (Ce) luminescent centers were doped in SrS films and a Ce concentration of 0.3 mol % was determined to be optimum for EL. For SrS:Ce films deposited onto a quartz substrate, x-ray diffraction and photoluminescent measurements indicated an optimum substrate temperature (Tsub) of 500 °C. In the EL fabrication process, Tsub was restricted to [less, double equals]410 °C by the softening temperature of the alumino-silicate substrate used in the EL device. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150488
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  • 2
    Electronic Resource
    Electronic Resource
    Excitonic structures in II–VI superlattices observed by Brewster-angle reflectance spectroscopy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 533-536 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reflectance spectra at Brewster-angle of incidence in ZnSe/ZnS superlattices are investigated together with a ZnSe thin film for comparison. The spectra for p polarization show a distinct peak profile at the energy of the fundamental excitonic transition, with a great reduction of the nonresonant background reflectance. The dependence of the reflectance spectra on the resonance width, as well as the incident angle, is numerically investigated and found to be consistent with the experimental results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357106
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  • 3
    Electronic Resource
    Electronic Resource
    Observation of quantum-size effects in optical transmission spectra of PbTe/Pb1−xEuxTe superlattices (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 478-480 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical transmission spectra of PbTe/Pb1−xEuxTe (x=0.05) superlattices were measured at 300 K. The superlattices were prepared on thick Pb1−xEuxTe buffers grown on KCl (100) substrates using the hot wall epitaxy technique. Clear steplike absorptions corresponding to the interband electron transitions between subbands (n=1,2,3 to n=1,2,3) were observed for the first time for the PbTe/Pb1−xEuxTe superlattice. The experimental absorption edges agreed very well with theoretical ones calculated assuming the conduction-band offset is equal to that of the valence band.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98372
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  • 4
    Electronic Resource
    Electronic Resource
    Conductive atomic force microscopy study of InGaN films grown by hot-wall epitaxy with a mixed (Ga+In) source (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1670-1673 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The local morphology and electrical properties of InGaN films grown using a hot-wall epitaxy system coupled with a simple mixed source (metallic gallium and indium) were investigated by means of conductive atomic force microscopy. The photoluminescence (PL) wavelengths of two types of samples grown at different substrate temperatures (685 and 660 °C) show different wavelength peaks (400 nm for the former and 420 nm for the latter), even though these samples have almost the same In contents as deduced from x-ray diffraction results. The sample grown at the higher substrate temperature exhibits a very flat morphology with both a roughness of about 3 nm and a low conductive homogeneous distribution. On the other hand, the sample grown at the lower substrate temperature shows a rougher topography and inhomogeneous conductive distribution. The longer PL peak and the inhomogeneous conductive distribution were attributed to the In fluctuation of the InGaN films. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373869
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  • 5
    Electronic Resource
    Electronic Resource
    Lasing mechanism of type-I' PbSnTe–PbTeSe multiquantum well laser with doping structure (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 3023-3027 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Even though PbSnTe–PbTeSe superlattice has a type-I' structure, its multiquantum well (MQW) laser has been realized by introducing band bending in the MQW active region. The MQW laser showed anomalous temperature dependence in the threshold current and the corresponding output photon energy. The lasing mechanism and anomalous behavior of the laser is qualitatively well explained by taking into account the variation of band bending due to large temperature dependence of the dielectric constants, assuming the barrier height ΔEc=−40 meV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336923
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  • 6
    Electronic Resource
    Electronic Resource
    A proposal for p-type ZnS1-xSex–ZnTe superlattices (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 2960-2962 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Energy band structures ZnSe–ZnTe and ZnS0.5Se0.5 –ZnTe superlattices are calculated using the Kronig-Penney model taking into account strain effects due to the lattice mismatches between the materials. The ZnSe(30 A(ring))–ZnTe(5 A(ring)) and the ZnS0.5Se0.5 (30 A(ring))–ZnTe(5 A(ring)) superlattices have energy gaps of 2.5 and 2.7 eV, respectively. The ZnS0.5Se0.5 (30 A(ring))–p-type ZnTe(5 A(ring)) superlattice is considered to be a p-type material of 1017 cm−3 and to be available for a hole injection layer to an n-type ZnSe layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335239
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