Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
69 (1991), S. 4454-4456
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Narrow InAs-base GaSb/InAs hot-electron transistors have been grown by low-pressure metalorganic chemical vapor deposition. The InAs bases are 30, 50, and 100 A(ring) thick. The ground-state electron subband energy E0 is determined from values of collector current. For thinner wells, values of E0 are well explained by a simple effective mass calculation. Here, a mixing of InAs conduction-band states with GaSb valence-band states is neglected because of symmetry mismatch. The effect of nonparabolicity of the InAs conduction band is taken into account.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.348378
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