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  • 1
    Electronic Resource
    Electronic Resource
    Analysis of the properties of radio frequency ion plated Cu films based on the calculation of the ion energy available per film atom (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6150-6157 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: During plasma assisted film deposition (PAD), the ion energy available per film atom plays an important role in film growth and morphology development. Consequently, it influences the film properties such as stress, adhesion, and dc resistivity. Calculation of the ion energy available per film atom is a little difficult in PAD because of a lack of data on the flux and energy distribution of ions (IED) incident on the film during deposition. In this article, the nature of the IED, in a rf ion plating system used for Cu film deposition, is determined with the help of a theoretical model available in literature and the plasma parameters obtained from Langmuir probe data. Then the ion energy available per Cu film atom (ECu) is calculated to be in the range of 0.5–5 eV/atom. This is further used to explain the variation of film morphology and dc resistivity with the ion plating process variables, viz., pressure, Cu evaporation rate and substrate bias. This range of ECu is insufficient to influence the film thickness significantly via resputtering. The film thickness is influenced to a much greater degree by the evaporation rate due to collisional scattering of the film vapor in the relatively high pressure used during ion plating. The film morphology is shown to improve with increase in the ECu but shows the presence of micro cracks at pressure higher than 2 mTorr, probably due to increased neutral gas adsorption. The data on ECu and morphology is then used to show that the dc resistivity of the films is influenced by grain boundary scattering and partial oxidation during deposition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355181
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  • 2
    Electronic Resource
    Electronic Resource
    Structure and properties of diamondlike carbon coatings deposited in rf plasma from benzene and monosubstituted benzenes (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 6668-6672 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Properties of diamondlike coatings deposited in a modified design of the plasma reactor system are reported. Benzene and monosubstituted benzenes are used as the source gases. The films have been analyzed using scanning electron microscopy, glancing angle x-ray diffraction, Fourier transform infrared spectroscopy, and x-ray photoelectron spectroscopy techniques. Large crystallites (∼30 μm) are observed. The x-ray diffraction and x-ray photoelectron spectroscopy have been utilized to identify the physicochemical nature of the deposited films. Fourier transform infrared spectroscopy results suggest sp3 type of bonding in the films. Films are colorless, electrically insulating (≥109 Ω cm), and corrosion resistant.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342021
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Characterization of SnO2-based H2 gas sensors fabricated by different deposition techniques (1997)
    Springer
    Journal of materials science 8 (1997), S. 23-27 
    Details
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Thick and thin films of SnO2 are extensively used for resistive gas sensors. Characteristics are compared for films produced by four different techniques – chemical vapour deposition (CVD), spray pyrolysis, vacuum evaporation and screen printing. The films are characterized for H2 sensing only, using a static measurement system to investigate their temperature selectivity. The samples are tested at a concentration of 300 p.p.m. H2 gas, a typical value for comparison. No selective peak is observed for CVD and spray deposited samples, and the selective peak for vacuum evaporated samples has a low sensitivity. But the selective peak for screen printed samples has a sensitivity of 55% (δR/Rair). And what is more, the screen printed samples have a repeatable response.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1018544702391
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  • 4
    Electronic Resource
    Electronic Resource
    Analysis of PPMMA films from oxygen plasma using X-ray photoelectron spectroscopy (1994)
    Bognor Regis [u.a.] : Wiley-Blackwell
    Journal of Polymer Science Part A: Polymer Chemistry 32 (1994), S. 2275-2281 
    Details
    ISSN: 0887-624X
    Keywords: plasma polymerization ; electron beam resist ; X-ray photoelectron spectroscopy ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Notes: Plasma polymerized methyl methacrylate (PPMMA) films have been synthesised on silicon substrates in RF glow discharge using oxygen plasma. The electron beam delineation sensitivity of the PPMMA films has been studied systematically by varying oxygen and monomer flow rates. X-ray photoelectron spectroscopy (XPS) analysis clearly illustrates how C/O ratio in the films determines the properties of PPMMA films as electron beam resist. © 1994 John Wiley & Sons, Inc.
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/pola.1994.080321209
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