Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
81 (1997), S. 3316-3319
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A molecular beam epitaxy grown wavelength tunable GaAs p+-i homojunction interfacial work-function internal photoemission far-infrared detector is developed. The multilayer (p+-i-p+-i-...) detector structures consist of 2, 5, and 10 emitter layers. Experimental results are explained in terms of the number of emitter layers and the doping concentrations of the emitter layer. A detector with 10 multilayers and an emitter layer doping concentration (Ne) of 3×1018 cm−3 shows a current responsivity of 2 A/W, an effective quantum efficiency of 9.2% (at 26.3 μm) with a cutoff wavelength of 85 μ and the noise equivalent power of 2.18×10−12 W/Hz at 4.2 K. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.364356
Permalink
| Library |
Location |
Call Number |
Volume/Issue/Year |
Availability |
