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  • 1
    Electronic Resource
    Electronic Resource
    Quantum efficiency and spectral response of compositionally graded HgCdTe P-n heterojunction photodiodes (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4399-4406 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results are presented of a study of the quantum efficiency of HgCdTe heterojunction photodiodes. All heterojunctions considered in the study consist of a wide-band-gap P-type layer and a narrow-band-gap n-type layer, and are illuminated from the backside. The n-type layer is compositionally graded and therefore contains a built-in electric field. Due to the difference in band gaps photons are absorbed in the active n-type layer only and are collected by both drift and diffusion mechanisms. The one-dimensional continuity equation is first solved in the linearly graded n-type region under illumination conditions, and then the dependence of the quantum efficiency on the resulting built-in electric field is presented. Two different modes of illumination are compared: In the first mode, associated with n-on-P HgCdTe diodes, the light reaches the transparent P layer first; in the second mode, associated with P-on-n diodes, the light reaches the transparent P side after it passes through the opaque n-type layer. The superiority of the first mode is demonstrated: It consistently renders higher quantum efficiencies, and is also less sensitive to several properties of the diode such as the width of the absorbing layer and the quality of the backside interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357333
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  • 2
    Electronic Resource
    Electronic Resource
    The effects of built-in electric field on the performance of compositionally graded P-on-n HgCdTe heterojunction photodiodes (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 925-933 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The results of a study of the optical and electrical performance of P-on-n HgCdTe heterojunctions, with a linear gradient in composition, are presented. First presented is a solution of the one-dimensional continuity equation which includes the spatial dependencies of the material properties, such as absorption coefficient, band gap, and intrinsic carrier concentration, in the graded layer. Using the above solution, diodes with different grading profiles (and hence different electric fields), but with the same cutoff wavelength, are compared. The advantages of the built-in electric field formed by the grading in composition are presented and discussed. It is shown that the major consequence of the electric field is the reduction of the effects caused by the imperfect CdTe/HgCdTe interface at the backside. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359020
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  • 3
    Electronic Resource
    Electronic Resource
    On the extraction of linear and nonlinear physical parameters in nonideal diodes (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6873-6883 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe a parameter extraction technique for the simultaneous determination of physical parameters in nonideal Schottky barrier, p-n and p-i-n diodes. These include the ideality factor, saturation current, barrier height, and linear or nonlinear series, and parallel leakage resistances. The suggested technique which deals with the extraction of bias independent parameters makes use of the forward biased current–voltage (I–V) characteristics and the voltage-dependent differential slope curve α(V)=[d(ln I)]/[d(ln V)]. The method allows (a) establishment of the current flow mechanisms at low and high bias levels, (b) extensive of the permissible ranges of determined parameters beyond what is possible in other published methods, and (c) to automation and computerization of the measurement processes. The method is verified experimentally using metal–semiconductor structures based on Si, InGaP, and HgCdTe as well as an InGaAs/InGaAsP multiple quantum well laser diode exemplifying a p-n junction. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370206
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  • 4
    Electronic Resource
    Electronic Resource
    Suppression of 1/f noise by permanent magnetic field in ion-implanted HgCdTe photodiodes (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2990-2992 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A brief report on the experimental evidence and theoretical explanation of substantial effects of a permanent magnetic field (PMF) of B=0–2 T on 1/f noise in HgCdTe n+−p high performance planar photodiodes (HPPD) is presented. It is shown that the PMF suppresses 1/f noise in the HPPD at lower frequencies fL〈f0(approximate)5–7 s−1 and increases it at higher ones fH〉f0. These PMF effects follow from the earlier proposed nanoscopic stochastic theory of 1/f noise in solids. The proposed theoretical model is in good agreement with observations. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1406987
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  • 5
    Electronic Resource
    Electronic Resource
    Planar p-on-n HgCdTe heterostructure infrared photodiodes (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1331-1333 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on a simple process to fabricate planar Hg1−yCdyTe/Hg1−xCdxTe (x〈y) heterostructure photodiodes with p-on-n configuration. The material used for this demonstration was a double-layer p-on-n heterostructure that was grown by a liquid-phase-epitaxy technique. The p-on-n planar devices consisted of an arsenic-doped p-type epilayer (y=0.28) on top of a long-wavelength infrared n-type epilayer (x=0.225, λ=10 μm). The ion-beam-milling p-to-n type conversion effect was used in order to delineate the active device element, and to isolate the planar device. Detailed analysis of the current–voltage characteristics of these diodes as a function of temperature show that they have high performance and that their dark current is diffusion limited down to 60 K. The results show that the R0A values are close to the theoretical limit over a wide range of cutoff wavelengths. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1353843
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  • 6
    Electronic Resource
    Electronic Resource
    Response to "Comment on ‘Electrical properties of epitaxially grown CdTe passivation for long-wavelength HgCdTe photodiodes' '' [Appl. Phys. Lett. 68, 2453 (1996)] (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2455-2455 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116318
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  • 7
    Electronic Resource
    Electronic Resource
    Monitoring HgCdTe layer uniformity by the differential absorption technique (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1864-1866 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, we demonstrate how the differential absorption technique can be applied to study band gap uniformity in HgCdTe samples. The transmission of HgCdTe wafers is measured at room temperature and data filtering is used to remove both the interference fringes and high-frequency noise. This data treatment approach produces reliable transmission data for HgCdTe layers as thin as 8 μm. In addition, the spectrum of the interference fringes is used to estimate the HgCdTe layer thickness with an accuracy of ±0.1 μm. The absorption coefficient is differentiated twice with respect to the photon energy and an approximate value of the band gap is estimated from extrema of the derivatives. By applying this procedure to different points on the same HgCdTe wafer, we can determine both lateral and transverse fluctuations of the semiconductor band gap. The initial results indicate that the accuracy of the differential absorption technique is around ±0.5 meV for HgCdTe wafers. The differential absorption technique appears suitable for routine characterization of HgCdTe wafers because it is simple, nondestructive, and applicable at room temperature. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117459
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  • 8
    Electronic Resource
    Electronic Resource
    Anisotropy in detectivity of GaN Schottky ultraviolet detectors: Comparing lateral and vertical geometry (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 347-349 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Vertical and lateral geometry GaN-based Schottky barrier photodetectors have been implemented, using similar quality material and the same fabrication process. The vertical detector exhibits two orders of magnitude higher responsivity. This is attributed to improved ohmic backcontacts, due to the highly doped buried layer. The vertical detectors exhibits also lower 1/f noise level, which is attributed to the reduced effect of dislocations on the carrier transport, resulting in lower mobility fluctuations. The vertical detector normalized detectivity is four orders of magnitude higher. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1433910
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  • 9
    Electronic Resource
    Electronic Resource
    Gain mechanism in GaN Schottky ultraviolet detectors (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1417-1419 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Schottky barrier GaN ultraviolet detectors, both in vertical and in lateral configuration, as well as in a metal–semiconductor–metal geometry were implemented. All devices exhibit a high gain at both reverse and forward bias. The photoresponse in the forward bias is in the positive current direction. We attribute the gain to trapping of minority carriers at the semiconductor–metal interface. The excellent agreement between the calculated responsivity and the experiment indicates that the model is valid for all device structures under study, and represents a unified description of gain mechanism in GaN Schottky detectors. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1394717
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  • 10
    Electronic Resource
    Electronic Resource
    Estimation of HgCdTe band-gap variations by differentiation of the absorption coefficient (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2101-2103 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new simple nondestructive method for band-gap estimation in HgCdTe layers is presented in this work. The theoretical approach is based on a qualitative empirical model that assumes two different regions of absorption in HgCdTe. The border between the two regions, which indicates the approximate value of the band gap, is determined by differentiation of the absorption coefficient in respect to the photon energy. The approach is verified by experimental measurements on several HgCdTe layers grown by different techniques. First, the transmission is measured by Fourier transform infrared (FTIR) spectroscopy at room temperature; then, the measured data is smoothed and the absorption coefficient extracted. The absorption coefficient is then differentiated twice in respect to the photon energy which allows estimation of the average band gap and band-gap variations within the HgCdTe layer. It appears that this simple procedure can assist in monitoring the quality of HgCdTe layers and help predicting the cutoff wavelength of HgCdTe photodiodes. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113916
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