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  • 1
    Electronic Resource
    Electronic Resource
    The improvement of phase modulated spectroscopic ellipsometry (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 2958-2966 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Spectroscopic ellipsometry using photoelastic modulator [phase modulated spectroscopic ellipsometry (PMSE)] has been improved in the spectral range. Spectroscopic ellipsometry using the rotating analyzer [rotating analyzer spectroscopic ellipsometry (RASE)] has demonstrated its capability of measuring the reflectivity ratio, ρ(ω), from 1.5 to 6 eV with a single scan, but PMSE has not been able to do so. We demonstrate that PMSE also can measure ρ(ω) from 1.5 to 6 eV with a single scan. We discuss the problems and show their solutions to achieve this goal. We also discuss the accuracy of our PMSE by comparing the spectral data by RASE with those by our PMSE. We find that the simplest possible procedure with our system provides reasonably accurate values, after including the zone average which is easy to perform with our system. The extension of the spectral range is a decisive advantage, especially in studying the E1 structure of the wide band gap materials such as ZnSe.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142593
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  • 2
    Electronic Resource
    Electronic Resource
    Electron beam electroreflectance studies of GaAs and CdTe surfaces (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1584-1586 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An electron beam electroreflectance (EBER) system has been built and used to investigate GaAs and CdTe sample surfaces. EBER permits one to go to low temperatures, to couple electroreflectance with high-vacuum techniques and to study the effects of different surface treatments. Analysis shows that the EBER technique leads to only negligible thermal modulation of the sample for low-energy electron beams such as that used here. The results of our measurements before and after sputtering with 2 keV O+2 ions clearly show that the measurements are very sensitive to the condition of sample surfaces. Analysis of the results shows the existence of distinct surface and bulk signals and gives detailed information about the surface before and after sputtering. Comparison of our EBER results with room-temperature electrolyte-electroreflectance results on both GaAs and CdTe confirms the analysis and establishes that electroreflectance is a surface-sensitive technique.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99088
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Study of the interface of undoped and p-doped ZnSe with GaAs and AlAs (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 42-44 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used electrolyte electroreflectance (EER) to characterize ZnSe/GaAs and ZnSe/AlAs interfaces. The great sensitivity of EER to interface space-charge regions enabled us to detect both interface crossover transitions and transitions to triangular-well interface states. The observation of these transitions provides the first unambiguous proof that the ZnSe/GaAs interface is type I and allowed us to determine the band offsets and band bendings, the diffusion lengths across each interface, and the amount of interdiffusion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102641
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  • 4
    Electronic Resource
    Electronic Resource
    Electroreflectance and photoluminescence study of the effect of hydrogen on heavily doped GaAs/AlGaAs structures (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2829-2831 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly doped semiconducting heteroepitaxial structures are commonly found in advanced devices. It is difficult to interpret quantitatively the results of optical measurements on such structures because the strong built-in electric fields present invalidate the low-field theories usually used to interpret those results. We have studied by electrolyte electroreflectance and photoluminescence a GaAs/AlGaAs resonant tunneling structure with a highly n-doped GaAs substrate and cap, before and after hydrogenation. We also have developed a new, improved microscopic theoretical treatment of the effects of strong fields on the local dielectric function and have used that treatment to evaluate quantitatively the effect of hydrogenation on the densities of shallow donor levels and of deep traps in the GaAs cap and to find the interface charges and band-pinning levels in the resonant tunneling junction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103755
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  • 5
    Electronic Resource
    Electronic Resource
    Line shape of the optical dielectric function (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1176-1178 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A systematic study of the optical dielectric function by spectroscopic ellipsometry and electroreflectance has shown that the proper functional form for the Green's function for an electron-hole pair in GaAs or CdTe is primarily Gaussian, not Lorentzian as is commonly assumed, although it is primarily Lorentzian for Hg1−xCdxTe. The Lorentzian part of the broadening is shown to measure the alloy, impurity, and defect scattering.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99641
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  • 6
    Electronic Resource
    Electronic Resource
    Evidence that arsenic is incorporated as As4 molecules in the molecular beam epitaxial growth of Hg1−xCdxTe:As (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1975-1977 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Molecular arsenic, As4, is commonly used as the source for in situ p-type doping of Hg1−xCdxTe grown by molecular beam epitaxy. As incorporated, the arsenic is strongly self-compensated, requiring annealing for its p-type electrical activation. Here, a quasithermodynamic model is used to interpret the dependence of the arsenic concentration, cAs, as measured by secondary ion mass spectroscopy, on the incident As4 and Hg fluxes during growth. The results strongly suggest that the As4 is absorbed in its molecular form rather than being dissociated on the growth surface, as has previously been assumed. This clearly is relevant to the self-compensation of the arsenic in as-grown Hg1−xCdxTe. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123718
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  • 7
    Electronic Resource
    Electronic Resource
    Study of mercury cadmium telluride epilayers grown by metalorganic vapor-phase epitaxy (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 2014-2017 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the growth and characterization of HgCdTe epilayers grown by metalorganic vapor-phase epitaxy. The transport properties indicate that it is possible to grow epilayers with mobilities comparable to those of the best bulk-grown materials. Electrolyte electroreflectance studies have yielded depth profiles for the alloy composition, the strains, and the density of polarizable defects. These latter results indicate very clearly that the interface alloy/substrate is very sharp and does not extend over more than 2000 A(ring). Moreover, in the bulk of the epilayers the strains are low and comparable to those found in high-quality bulk single crystals.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334388
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  • 8
    Electronic Resource
    Electronic Resource
    Theory for superconductivity in Pd-H and Pd-D systems (1973)
    Springer
    The European physical journal 260 (1973), S. 367-374 
    Details
    ISSN: 1434-601X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract A theory is presented explaining the recently observed superconductivity at 9 °K in Pd-H and at 11 °K in Pd-D as due to the quenching of the spin-fluctuations and as due to the decrease of the Coulomb pseudo-potential μ present in Pd. That one observes for PdD a larger superconducting transition temperatureT c than for PdH is explained by the larger lattice expansion resulting for adding H to Pd. The observed non-monotonic dependence ofT c on the Hydrogen concentration is explained by the fact that approximately λ ∝N(0) for smallN(0), whereN(0) is the electronic density of states at the Fermi-energy and where λ denotes the electron-phonon coupling constant. Superconducting transition temperatures are estimated for PtH and RhH.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01397961
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