Digitale Medien
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
54 (1989), S. 1884-1886
ISSN:
1077-3118
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
Negative transconductance is reported in a resistive gate metal-semiconductor field-effect transistor (MESFET) for the first time. The negative transconductance arises as a result of the negative differential mobility of electrons in the GaAs channel, and is adequately described by a simple equivalent circuit model. The experimental device is fabricated with a planar ion-implanted MESFET process, and shows promise as a microwave signal source for use in monolithic microwave integrated circuits.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.101230
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