Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
88 (2000), S. 4319-4324
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Highly efficient electroluminescence (EL) is obtained at low operating voltage (〈5 V) from n+-type silicon-electrochemically oxidized thin porous silicon–indium–tin–oxide junctions. Continuous wave external quantum efficiency greater than 1% and power efficiency of 0.37% have been achieved. Considerable reduction of leakage current accounts for the enhancement of EL efficiency upon oxidation. The EL time response ((approximate)30 μs) is slower than the photoluminescence one, due to slow electrical charging of porous silicon. No degradation of quantum efficiency is observed during operation and upon aging. This is attributed to the electrochemically grown oxide, which should provide a better surface passivation than the initial hydrogen coverage. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1290458
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