Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
86 (1999), S. 1443-1448
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A two-dimensional model of a strained Si/Si1−xGex transistor with δ-doped layers was developed. A semiclassical drift diffusion model is used to study the effects of different conduction-band offsets and variation of the distance between the Si channel and an n-type δ-doped layer as well as the thickness of this δ-doped layer at room temperature. We found that a large conduction-band offset, or a large Ge concentration, confines electrons more strongly to the Si channel. These factors raise the drain current when the doping level per unit area is constant. The area between the Si channel and the δ-doped layer and the δ-doped layer itself forms a barrier to electrons donated by the donor atoms in the δ-doped layer. Hence, the smaller the distance between the Si channel and the δ-doped layer and the thinner the δ-doped layer, the larger the number of electrons in the Si channel. Through the present analysis, an optimum design concept is clarified for device applications of Si/Si1−xGex systems. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.370909
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