Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
54 (1989), S. 1311-1313
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A silicon-on-silicon dioxide structure (silicon-on-insulator) produced by combined "van der Waals'' bonding and laser fusing has been studied by cross-sectional transmission electron microscopy. Areas in the silicon corresponding to the regions which are locally melted by the laser beam were found to contain a high density of dislocations after fusing. The radius and depth of these defect areas, as observed in the microscope, are compared with a simple analytical model of the laser-induced melting process.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.101398
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