ISSN:
1573-4803
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract Unusual p-n junctions have been obtained by vapour deposition of amorphous V2O5 thin films on monocrystalline p-type silicon wafers and their current-voltage characteristics have been studied. The efficiency of such diodes and the effect of illumination are shown to depend strongly on the parameters of the evaporation process. Results are discussed, with particular emphasis on the role of the electrical charge mobilities.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01174518
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