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  • 1
    Electronic Resource
    Electronic Resource
    Band alignment of ZnSe/Zn0.75Mg15Be10Se heterostructures (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5811-5814 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical properties and band alignment of ZnSe/ZnMgBeSe heterostructures are investigated. Two sets of ZnSe/ZnMgBeSe multi-quantum-well structures that consist of five or three wells with different well thicknesses and 100-nm-thick ZnMgBeSe barrier layers are grown on GaAs (100) substrates by molecular beam epitaxy. Low-temperature photoluminescence spectra show dominant sharp excitonic emission whose peak position systematically shifts to the higher energy side with decreasing the well thickness. Photoluminescence excitation spectra show optical transitions between excited quantum levels in addition to the ground levels. The standard analysis based on the effective-mass approximation gives the valence band offset of ΔEυ=(0.4±0.1)ΔEg. This is consistent with calculated values based on Harrison's linear combination of atomic orbitals theory. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1468279
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  • 2
    Electronic Resource
    Electronic Resource
    Composition dependence of the energy gap of Zn1−x−yMgxBeySe quaternary alloys nearly lattice matched to GaAs (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 4168-4170 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The composition dependence of the energy gap (Eg) of Zn1−x−yMgxBeySe quaternary alloys grown by molecular-beam epitaxy was investigated. The energy gap of Zn1−x−yMgxBeySe can be controlled in a range of 2.7 eV〈Eg〈3 eV under nearly lattice-matching conditions to GaAs(001). The phenomenological formula for the energy gap of ZnMgBeSe quarterly is obtained using the bowing parameters theoretically or experimentally estimated for the ternary compounds. These results show that nonlinear behavior was observed on the composition dependence of the energy gap as the Be and Mg compositions increased. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1424064
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  • 3
    Electronic Resource
    Electronic Resource
    Low-threshold optically pumped lasing at 444 nm at room temperature with high characteristic temperature from Be-chalcogenide-based single-quantum-well laser structures (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 894-896 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have achieved low-threshold optically pumped lasing at 444 nm at room temperature with high characteristic temperature (T0) from ZnSe/ZnMgBeSe single-quantum-well structures. The threshold intensity is as low as 15 kW cm−2, while T0 value is as high as 166 K. Lasing is observed up to 473 K. Lasing wavelength of 444 nm at room temperature is the shortest wavelength ever achieved in ZnSe-based laser diode structures. The laser structure includes a single ZnMgBeSe/ZnSe/ZnMgBeSe quantum well with a ZnSe well thickness of 4 nm. The (004) x-ray diffraction rocking curve of the ZnMgBeSe quaternary cladding layers shows a sharp diffraction peak with a full width at half maximum of 21 arcsec which is in contrast to that from a ZnMgSSe cladding layer showing much broader multiple peaks. The observed lasing features are partly ascribed to high crystal quality of the ZnMgBeSe layers and type-I band alignment, as has been supported by photoluminescence in addition to x-ray diffraction measurements. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124546
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  • 4
    Electronic Resource
    Electronic Resource
    ZnCdTe/ZnTe/ZnMgSeTe quantum-well structures for the application to pure-green light-emitting devices (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 566-568 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A ZnCdTe/ZnTe/ZnMgSeTe quantum-well (QW) structure lattice matched to ZnTe is proposed for the light-emitting devices in the pure-green wavelength region. Thin ZnTe layers are inserted in between the ZnCdTe QW layer and ZnMgSeTe cladding layers, which improve the quality of the QW structure as demonstrated by its narrow photoluminescence line width (6.5 meV at 10 K). Optically pumped lasing at 552 nm at room temperature with a threshold optical power of 215 kW cm−2 is achieved. The present results clearly show the feasibility of ZnTe-based QW structures for the application to light-emitting devices in the pure-green wavelength region. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1343475
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