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  • 1
    Electronic Resource
    Electronic Resource
    Germanium-doped gallium phosphide obtained by neutron irradiation (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2287-2293 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results of electrical, optical, electron spin resonance and optically detected magnetic resonance studies of thermal neutron irradiated and annealed at 800 °C n-type GaP are presented. Evidence is found to support the view that the main dopant introduced via transmutation of GaP, germanium, occupies cation sites and forms neutral donors. This confirms the possibility of neutron transmutation doping of GaP. Simultaneously, it is shown that germanium is absent at cation sites. Presence of other forms of Ge-related defects is deduced from luminescence and absorption data. Some of them are tentatively identified as VGa-GeGa acceptors leading to the self-compensation process. This observation means that the neutron transmutation as a doping method in application to GaP is not as efficient as for Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354712
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Photoluminescence excitation interpreted by photon recycling in GaAs/GaAlAs multiple-quantum-well structure (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4194-4200 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescence spectra of GaAs/GaAlAs multiple quantum wells on GaAs buffer show a band related to confined quantum-well states as well as the emission from electron-hole recombination in the buried GaAs layer. The power dependence of the GaAs emission intensity indicates that the nonequilibrium minority-carrier concentration in GaAs is large due to substantial photon recycling. The principal features of the photoluminescence excitation data are discussed in the context of the photon recycling mechanism and a quantitative calculation of the photoluminescence excitation spectrum is presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356004
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Microstructural evolution of GaSb self-assembled islands grown by metalorganic chemical vapor deposition (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1233-1235 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Studies of the growth of GaSb self-assembled islands on GaAs and their morphological evolution for varying GaSb coverage are presented. Islands had a mean height of 15 nm and planar dimensions of 60 by 130 nm. Evolution of the island height, width and length shows that the island height and width increases rapidly in the first 2 s and then stabilizes, while the island length increases linearly. This behavior is interpreted using the theory by Tersoff and Tromp [Phys. Rev. Lett. 70, 2782 (1993)]. The volume growth was found to be initially faster than bulk growth. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122137
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Direct observation of large-scale nonuniformities in hydride vapor-phase epitaxy-grown gallium nitride by cathodoluminescence (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3583-3585 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydride vapor phase epitaxial GaN films grown on sapphire without a buffer are found to contain large-scale regions with high electron concentration located close to the interface. These regions are composed of individual columns forming an irregular but quasicontinuous layer, while the rest of the film has a much lower carrier concentration. The highly doped regions are easily visualized using cathodoluminescence. The coexistence of regions with low and high electron concentration allows us to explain the concurrent evidence of high film quality in photoluminescence, Raman spectroscopy and x-ray diffraction, and a high electron concentration measured in transport studies. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122831
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Shear piezoelectric coefficients of gallium nitride and aluminum nitride (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3965-3967 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a direct method of measuring the shear strain using a laser-based interferometer. The method was applied to the measurement of the d15 coefficient for wurtzite GaN and AlN. A value for d15 of 3.6±0.2 pm V−1 for AlN has been obtained, in good agreement with values quoted in the literature. The value of d15 for GaN has also been measured to be 3.1±0.2 pm V−1. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125508
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  • 6
    Electronic Resource
    Electronic Resource
    Electrostriction in gallium nitride (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3641-3643 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electromechanical effects in the compound semiconductor gallium nitride have been measured. The electromechanical response is found to include a significant contribution from electrostriction. The measured value of the electrostrictive coefficient M33 in a polycrystalline sample of GaN is (1.2±0.1)×10−18 m2 V−2. This finding may have significance for devices using strained layers of this material. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125414
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  • 7
    Electronic Resource
    Electronic Resource
    Extensional piezoelectric coefficients of gallium nitride and aluminum nitride (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 4133-4135 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of piezoelectric coefficients d33 and d31 in wurtzite GaN and AlN using an interferometric technique are presented. We report on the clamped values, d33c of these coefficients found in GaN and AlN thin films, and we derive the respective bulk values, d33b. The clamped value of d33c in GaN single crystal films is 2.8±0.1 pm V−1 which is 30% higher than in polycrystalline films grown by laser assisted chemical vapor deposition. The value of d33b in bulk single crystal GaN is found to be 3.7±0.1 pm V−1. The value of d33c in plasma assisted and laser assisted chemical vapor deposited AlN films was 3.2±0.3 and 4.0±0.1 pm V−1, respectively. The bulk value estimate of d33b in AlN of 5.6±0.2 pm V−1 was deduced. The values of d31, both clamped and bulk, were calculated for wurtzite GaN and AlN. We have also calculated the values of d14 in cubic phase film and bulk GaN and AlN. Interferometric measurements of the inverse piezoelectric effect provide a simple method of identifying the positive direction of the c axis, which was found to be pointing away from the substrate for all films. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125560
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    Paper (German National Licenses)
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  • 8
    Electronic Resource
    Electronic Resource
    Photoluminescence of multilayer GaSb/GaAs self-assembled quantum dots grown by metalorganic chemical vapor deposition at atmospheric pressure (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2976-2978 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate photoluminescence from multilayer GaSb self-assembled quantum dots embedded in GaAs grown by metalorganic chemical vapor deposition. The spectra show the emission from quantum dots at about 1.09 eV and from the wetting layer at 1.39 eV. With increasing temperature the wetting layer emission quenches faster than the quantum dot emission. We also observe a decrease of the quantum dot peak energy at temperatures between 50 and 70 K and a peak shift with increasing excitation powers typical of type II structures. A large separation (300 meV) between the photoluminescence peaks from quantum dots and the wetting layer suggests differences in the intermixing at the GaSb/GaAs interface in the structures grown by metalorganic chemical vapor deposition and by molecular-beam epitaxy. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1415351
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    Paper (German National Licenses)
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