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  • 1
    Electronic Resource
    Electronic Resource
    Resonant tunneling through low dimensional quantum structures (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3598-3601 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tunneling mechanism in zero- and one-dimensional quantum structures is studied. Several new results, peculiar to low dimensions, are predicted. We find that subband mixing and multichannel tunneling induce the appearance of new tunneling channels with unusual interference patterns, and allow for longer lifetime of the resonances at higher energies in various channels. It is shown that in low dimensions, there exists a critical size of the structure below which the resonance nature of the tunneling process is diminished. In zero and one dimensions, there exists a critical magnitude of the confinement potential, below which there are no resonances in the transmission function for any size of the well. Negative differential resistance and other phenomena related to the resonance characters of the tunneling will not appear in this case. We also develop a generalized transfer matrix method that takes into account subband mixing; this formalism can be used to describe any transport problem in low dimensions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352299
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Monolithic integration of a resonant tunneling diode and a quantum well semiconductor laser (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 110-112 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A monolithic integration of a double barrier AlAs/GaAs resonant tunneling diode and a GaAs/AlGaAs quantum well laser is reported. Negative differential resistance and negative differential optical response are observed at room temperature. The device displays bistable electrical and optical characteristics which are voltage controlled. Operation as a two-state optical memory is demonstrated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104970
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Microampere threshold current operation of GaAs and strained InGaAs quantum well lasers at low temperatures (5 K) (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2752-2754 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The operation of ultralow threshold current GaAs and InGaAs quantum well lasers at cryogenic temperatures has been studied. In particular the threshold current Ith and lasing wavelength of GaAs and strained InGaAs lasers have been measured as a function of temperature from 300 down to 5 K. Ith can in both lasers be characterized by a linear function of temperature up to 200 K, with a significantly (2.5×) larger dIth/dT for the GaAs laser. We measured a minimum threshold current of 120 μA for the GaAs laser and 165 μA for the InGaAs laser at 5 K. We derive a simple expression for the transparency carrier density as a function of temperature and effective masses to explain our results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104775
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Control of electric field domain formation in multiquantum well structures (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1101-1103 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation, expansion, and readjustment of electric field domains in multiquantum well stacks is described and explained in terms of sequential resonant tunneling. These effects are used to control the multiband spectral response in IR detector applications of these structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109793
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  • 5
    Electronic Resource
    Electronic Resource
    Observation of third-order intersubband dc Kerr effect at the midinfrared wavelengths in GaAs quantum wells (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1263-1265 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the first observation of third-order intersubband nonlinearities in a quantum well structure. We have measured the dc Kerr effect in a symmetric quantum well and found that the Kerr coefficients due to intersubband transitions are six orders of magnitude larger than that of bulk GaAs. To our best knowledge this is the largest value ever measured for the third-order susceptibility. By including dc screening effects and evaluating the internal electric field in the well, a good agreement between the calculated coefficients and the experimental ones was found.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107612
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    Paper (German National Licenses)
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  • 6
    Electronic Resource
    Electronic Resource
    Voltage-controlled tunable GaAs/AlGaAs multistack quantum well infrared detector (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2362-2364 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe a new type of intersubband GaAs/AlGaAs infrared detector consisting of three stacks of quantum wells; the quantum wells in a given stack are identical, but are different from stack to stack. Each stack is designed to yield an absorption and a photoresponse at a different peak wavelength. The resulting device is an infrared detector which can operate in a number of modes. Among the features of this device are a wide-band detection domain, a tunable response and excellent responsivities and noise figures. The tunable operation includes a sharp peak-switching response which follows the formation, expansion, and readjustment of electric field domains within the multiquantum well region.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107026
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    The construction of a coil to produce high pulsed magnetic fields (1968)
    Springer
    Flow, turbulence and combustion 18 (1968), S. 105-111 
    Details
    ISSN: 1573-1987
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Summary In this paper we describe a pulse apparatus for producing strong magnetic fields by discharging a capacitor bank through a coil. A new construction technique for specially reinforced coils, wound with copper wires, allows us to produce a magnetic field of 570 kOe, with a pulse time of 5 ms. Finally we mention some calculations of the field homogeneity in the coils.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00382340
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    Paper (German National Licenses)
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