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  • 1
    Electronic Resource
    Electronic Resource
    High-resolution x-ray scattering studies of epitaxial GdBa2Cu3O7−δ thin films (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7966-7971 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-resolution triple-crystal x-ray scattering techniques have been used to study high-temperature superconducting thin films of Gd-Ba-Cu-O grown in situ by dc magnetron sputtering onto substrates of (001) LaAlO3 and SrTiO3. The measurements suggest that the thin films are single crystal. Evidence is found for both c- and a-axis-oriented films on the LaAlO3 samples. In particular, no strain is observed in the films except at the interface between films of different relative orientation. No low-temperature structural transitions are observed in the films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356558
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    X-ray topography of the coherency breakdown in GexSi1−x/Si(100) (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2083-2085 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An x-ray topography study is presented of the coherency breakdown in GexSi1−x/Si(100) strained epilayers. Finite dislocation densities (in excess of 103 cm−2) are observed at compositions in the range 12–13 at. % Ge for an epilayer thickness of h≈180 nm. Above 13 at. % Ge the dislocation density starts to change rapidly and this composition is identified as critical for h≈180 nm, a thickness which is almost a factor of 4 lower than the accepted "critical'' thickness for this lattice mismatch. The result suggests that in low-mismatched GexSi1−x alloys the dislocation density will increase continuously at the "critical'' thickness, as opposed to exhibiting a sharp onset. The implications of these results to the various models of the critical thickness transition are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100288
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Dislocation images in X-ray section topographs of curved crystals (1991)
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 24 (1991), S. 304-311 
    Details
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: The contrast of dislocation images in X-ray section topographs of curved crystals has been investigated both experimentally and by computer simulation. Good agreement is found between experiment and simulation in both symmetric and asymmetric Laue geometries. Very little change is observed in the symmetric Laue images for radii of curvature as small as 18 m. In the asymmetric geometry, the background intensity rises and the Kato fringe visibility decreases as the curvature increases. The dynamical image becomes more localized and dominates the image as the direct image visibility falls. Our results explain the reversal of dislocation contrast in Lang projection topographs of curved crystals taken in asymmetric geometry.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0021889891001619
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    Paper (German National Licenses)
    Fulltext
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