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  • 1
    Electronic Resource
    Electronic Resource
    Electromechanical properties of Pb(Mg1/3Nb2/3)O3–7%PbTiO3 thin films made by pulsed laser deposition (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 6200-6202 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin film capacitors of Au/Pb(Mg1/3Nb2/3)O3–7%PbTiO3 [PMN–(0.07)PT]/(La1/2Sr1/2)CoO3 were made by pulsed laser deposition on single crystal {001} MgO substrates. The PMN–(0.07)PT dielectric was perovskite dominated, and demonstrated functional behavior typical of relaxors. Electrostrictive behavior was observed at fields up to 200 kV cm−1, however, the maximum strain was disappointingly low at only ∼0.14%. The macroscopic electromechanical d33 and Q33 coefficients were determined using piezo-response atomic force microscopy. At 100 kV cm−1 the macroscopic Q33 was found to be (2.6±0.2)×10−2 C−2 m4. The crystallographic electrostrictive coefficient was determined using in-situ x-ray diffraction and at the same field found to be significantly higher: (4.9±0.2)×10−2 C−2 m4. Since these electrostrictive coefficients are of the same order of magnitude as found in single crystal experiments (2.5–3.8×10−2 C−2 m4), it appears that the low out-of-plane strain is simply the result of poor polarizability in the thin films. An effective Q13 component of the electrostrictive tensor was also determined, and found to be ∼−0.32 ×10−2 C−2 m4. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1465116
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  • 2
    Electronic Resource
    Electronic Resource
    Effect of thermal expansion mismatch on the dielectric peak temperature of thin film relaxors (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 2295-2301 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strongly oriented thin film capacitors of Pb(Mg1/3Nb2/3)O3 were made by pulsed laser deposition and found to show a decreased temperature of the dielectric maximum (Tm) relative to bulk. The in-plane strain was measured and found to be compressive, a feature that is normally associated with increased Curie temperatures in conventional ferroelectrics. Other features, such as a more pronounced frequency dependence of Tm in thin films than in bulk, were also noted. An attempt to rationalize these differences by consideration of thermal expansion mismatch between substrate and film is presented. The shifts in Tm are modeled using a semiempirical Landau–Ginzburg–Devonshire model, in which the first coefficient of the thermodynamic potential has been modified to have a quadratic, rather than linear, temperature dependence. The predictions of the model are compared with experimental results from this work and other reports on relaxor thin films extracted from the literature. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1429761
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  • 3
    Electronic Resource
    Electronic Resource
    Transport properties of NdNiO3 thin films made by pulsed-laser deposition (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 606-608 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pulsed-laser deposition was used to make thin films of NdNiO3 on a variety of substrates. The films were found to be single phase perovskite in all cases. However, the transport behavior varied strongly as a function of the substrate used: the films were semiconducting on MgO, but showed a metal-semiconductor phase transition on SrTiO3 and NdGaO3. The best electrical-switching properties corresponded to films grown on NdGaO3, with the resistivity changing abruptly by more than two orders of magnitude at TMI∼185 K. Very thin films (∼35 nm) were also grown on NdGaO3 substrates to investigate the epitaxial strain effect on the transition. It appears that biaxial tensile strain stabilizes the high temperature metallic phase, thus lowering TMI. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371912
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  • 4
    Electronic Resource
    Electronic Resource
    Conducting Sr0.7NbO3 thin film electrodes for ferroelectric capacitors (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2622-2624 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the synthesis of thin films of the conducting cubic oxide Sr0.7NbO3 by pulsed laser deposition. Deposition conditions were investigated and optimized to yield both conductivity and crystallinity. Unlike most similar materials we find that successful synthesis of conducting Sr0.7NbO3 is very sensitive to oxygen pressure during deposition. Optimal properties were obtained for vacuum deposition at a substrate temperature of 750 °C. Typical resistivity was 800 μΩ cm at 300 K and independent of temperature down to 10 K. Films grew epitaxially onto {100} MgO. Functionality of the material was demonstrated by preparing MgO/Sr0.7NbO3/BaTiO3/Au capacitors. Despite their apparently excellent lattice match, these capacitors exhibited depressed Curie temperatures. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118937
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  • 5
    Electronic Resource
    Electronic Resource
    Influence of oxygen content on dielectric and electromechanical properties of Pb(Mg1/3Nb2/3)O3 thin films (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3035-3037 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pulsed laser deposition was used to grow Pb(Mg1/3Nb2/3)O3 (PMN) thin film planar capacitor structures. X-ray diffraction and plan-view transmission electron microscopy were used to verify PMN crystallography. The dc leakage current and ac capacitance and dielectric loss were measured as a function of temperature and frequency. Finally, crystallographic strain as a function of applied dc field was monitored in situ by x-ray diffraction. The electromechanical strain response was found to depend on the deposition conditions for each capacitor. Tensile strains of ∼0.2% and compressive strains of ∼0.35%, both parallel to the applied field, were measured for capacitors of different oxygen contents and thicknesses. Tensile strains achieved are higher than previously reported for PMN thin films or polycrystalline ceramics. We propose that the compressive strains are not an intrinsic property of the PMN. Instead they are induced by the combined effect of joule heating of the capacitor structure, caused by leakage currents, and thermal expansion mismatch between the substrate and films. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124056
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  • 6
    Electronic Resource
    Electronic Resource
    The effect of applied strain on the resistance of VO2 thin films (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3649-3651 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Vanadium dioxide thin films have been synthesized by pulsed laser deposition from pure vanadium metal targets. The electrical characteristics of these films were measured as a function of externally applied strain, based on three-point bend geometry. It is observed that strain significantly affects the resistance of the VO2 thin films below their metallic-semiconducting transformation temperature (0.04% in-plane tensile strain causing ∼35% reduction in resistance). Moreover, the levels of strain required to cause such resistance changes are well within those which can be produced by many strictive materials. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120469
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  • 7
    Electronic Resource
    Electronic Resource
    Thickness-induced stabilization of ferroelectricity in SrRuO3/Ba0.5Sr0.5TiO3/Au thin film capacitors (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 889-891 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pulsed-laser deposition has been used to fabricate Au/Ba0.5Sr0.5TiO3/SrRuO3/MgO thin film capacitor structures. Crystallographic and microstructural investigations indicated that the Ba0.5Sr0.5TiO3 (BST) had grown epitaxially onto the SrRuO3 lower electrode, inducing in-plane compressive and out-of-plane tensile strain in the BST. The magnitude of strain developed increased systematically as film thickness decreased. At room temperature this composition of BST is paraelectric in bulk. However, polarization measurements suggested that strain had stabilized the ferroelectric state, and that the decrease in film thickness caused an increase in remanent polarization. An increase in the paraelectric–ferroelectric transition temperature upon a decrease in thickness was confirmed by dielectric measurements. Polarization loops were fitted to Landau–Ginzburg–Devonshire (LGD) polynomial expansion, from which a second order paraelectric–ferroelectric transition in the films was suggested at a thickness of ∼500 nm. Further, the LGD analysis showed that the observed changes in room temperature polarization were entirely consistent with strain coupling in the system. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1496144
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  • 8
    Electronic Resource
    Electronic Resource
    Exploring grain size as a cause for "dead-layer" effects in thin film capacitors (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 703-705 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pulsed laser deposition was used to make a series of Au/Ba0.5Sr0.5TiO3 (BST)/SrRuO3/MgO thin film capacitors with dielectric thickness ranging from ∼15 nm to ∼1 μm. Surface grain size of the dielectric was monitored as a function of thickness using both atomic force microscopy and transmission electron microscopy. Grain size data were considered in conjunction with low field dielectric constant measurements. It was observed that the grain size decreased with decreasing thickness in a manner similar to the dielectric constant. Simple models were developed in which a functionally inferior layer at the grain boundary was considered as responsible for the observed dielectric behavior. If a purely columnar microstructure was assumed, then constant thickness grain-boundary dead layers could indeed reproduce the series capacitor dielectric response observed, even though such layers would contribute electrically in parallel with unaffected bulk-like BST. Best fits indicated that the dead layers would have a relative dielectric constant ∼40, and thickness of the order of tens of nanometers. For microstructures that were not purely columnar, models did not reproduce the observed dielectric behavior well. However, cross-sectional transmission electron microscopy indicated columnar microstructure, suggesting that grain boundary dead layers should be considered seriously in the overall dead-layer debate. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1494837
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  • 9
    Electronic Resource
    Electronic Resource
    Enhancement of dielectric constant and associated coupling of polarization behavior in thin film relaxor superlattices (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 815-817 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin film capacitor structures in which the dielectric is composed of superlattices of the relaxors [0.2Pb(Zn1/3Nb2/3)O3–0.8BaTiO3] and Pb(Mg1/3Nb2/3)O3 have been fabricated by pulsed laser deposition. Superlattice wavelength (Λ) was varied between ∼3 and ∼600 nm, and dielectric properties were investigated as a function of Λ. Progressive enhancement of the dielectric constant was observed on decreasing Λ, and, in contrast to previous work, this was not associated with the onset of Maxwell–Wagner behavior. Polarization measurements as a function of temperature suggested that the observed enhancement in dielectric constant was associated with the onset of a coupled response. The superlattice wavelength (Λ=20 nm) at which coupled functional behavior became apparent is comparable to that found in literature for the onset of coupled structural behavior (between Λ=5 nm and Λ=10 nm). © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1391233
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  • 10
    Electronic Resource
    Electronic Resource
    Relaxor features in ferroelectric superlattices: A Maxwell–Wagner approach (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3078-3080 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A Maxwell–Wagner series capacitor model is proposed to explain anomalous dielectric properties of ferroelectric superlattices. The results of the model show that a superlattice consisting of normal ferroelectric layers separated by low-resistivity interfacial regions can account for most experimental results reported to date, namely: dielectric enhancement for certain stacking periodicities, giant permittivities, and temperature migration of dielectric maxima as a function of frequency. The predictions of the model are discussed and compared to our own experimental results from thin film superlattice capacitors made by pulsed-laser deposition. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1324729
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