Library

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Stamford, Conn. [u.a.] : Wiley-Blackwell
    Polymer Engineering and Science 23 (1983), S. 947-952 
    ISSN: 0032-3888
    Keywords: Chemistry ; Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: This paper will describe a new concept for the production of high contrast photopatterns. The method is designed to produce good quality patterns with very low contrast illumination through the use of photobleachable materials in conjunction with standard photoresists. A very thin bleachable layer is first applied to the photoresist surface. Following conventional exposure, the layer is removed and the resist developed in the ordinary way. As a result of the presence of the bleachable material, the contrast of the illumination that reaches the photoresist is increased. It is for this reason that the technique is called contrast enhancement. The degree to which the contrast is enhanced depends on both the photochemical properties of the bleachable material and the dose required to expose the underlying resist. The paper will discuss properties required of the bleachable material in order to make the technique feasible, such as the magnitudes of the extinction coefficient and the quantum yield. Bleaching experiments on candidate materials for the characterization of these parameters will be described. Also to be discussed is a model of the bleaching dynamics, which was used to calculate the improvements in contrast that are achieved as a function of base resist sensitivity. The extra processing steps required by the presence of the bleachable layer will be covered. Submicron resist patterns that demonstrate the resulting improvement in contrast will also be shown.
    Additional Material: 11 Ill.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    New York : Wiley-Blackwell
    Journal of Polymer Science: Polymer Physics Edition 23 (1985), S. 1749-1758 
    ISSN: 0098-1273
    Keywords: Physics ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Physics
    Notes: The quantum yield for poly(methyl methacrylate)chain scission by ultraviolet light in the 214-229 nm wavelength region was found to be φd = 0.03 scissions per absorbed photon. Samples were 1.65-μm films spun cast on silicon wafers and irradiated under flowing nitrogen by a cadmium vapor lamp. Gel permeation chromatography was used for molecular weight determination. Heating (postbaking) the irradiated films at 150°C for one hour under reduced-pressure flowing nitrogen increased the observed scissions per absorbed photon to 0.04. Glass transition temperatures by DSC are well-represented by Tg (K) = 393.3 - 2.0 × 105/Mn for the postbaked samples (139,000 〉 Mn 〉 6500).
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...