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Back bias effects on two-dimensional electron gas (1988)

Schuermeyer, Fritz L. ; Grzyb, Joseph A. ; Curtis, Michael J. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 63 (1988), S. 1121-1125

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Details

ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: A new technique is described to study heterostructure field-effect transistors. This technique is based on the application of an electric field perpendicular to the channel via a p-doped substrate. The measurements demonstrate that the centroid of the two-dimensional electron gas resides approximately 10 nm below the heterointerface and that application of a negative substrate potential increases the confinement of these charges towards the interface. A negative substrate voltage decreases the K' factor of the transistor and also reduces the well capacity. Capacitance voltage measurements confirm that a parasitic channel in the donor layer can be formed and that it is shielded from the substrate by the two-dimensional electron gas.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.341123

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