ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Thin films of αRh2As were grown on top of GaAs (001) in a molecular-beam epitaxy system by codeposition of rhodium and arsenic from separate sources. αRh2As is a good metal with a resistivity equal to 20 μΩ cm, suitable for electronic applications. The holes, the only type of carriers, have a concentration equal to 2.5×1022 cm−3, i.e., a value of the same order of magnitude as that of the best silicides. However, in spite of several features common to αRh2As and GaAs (symmetry, almost equivalent unit-cell constant, and fcc As sublattices), the epitaxial arrangement [100](011)αRh2As//[110](001)GaAs mainly prevails instead of the expected simple unrotated relationship [100](001)αRh2As//[100](001)GaAs. This points out that the achievement of the minimum lattice mismatch is not always the driving force for the epitaxy. In agreement with the ternary phase diagram Rh-Ga-As, the (polycrystalline αRh2As)/GaAs system interacts above 400 °C and leads to the formation of the binary compounds RhGa and RhAs2.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.341961
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