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  • 1
    Electronic Resource
    Electronic Resource
    Study on Contact Mechanism of Interface in Wafer CMP Based on Abrasion Behavior (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 359-360 (Nov. 2007), p. 254-258 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Right getting hold of the contact form between the wafer and the pad is the precondition offully understanding the material removal mechanism in wafer chemical mechanical polishing (CMP)process. In this paper, according to friction and abrasion theory, the differentiating method of contactform between the wafer and the pad has been obtained firstly. Then, the material removal rate (MRR)produced by mechanical action, chemical action and their interaction has been achieved by test resultsof MRR. According to analysis on test results of MRR, it is concluded that the mechanical actionproduced by abrasives is the main mechanical action, the MRR produced by the interaction betweenthe mechanical action of abrasives and chemical action of slurry is the main MRR and the contactform between the wafer and the pad is solid-solid contact in wafer CMP. These results will providetheoretical guide to further understand the material removal mechanism of in wafer CMP
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/55/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.359-360.254.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    A Method to Improve Uniformity of Material Removal of Chemical Mechanical Polishing in LCOS Process (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 364-366 (Dec. 2007), p. 686-689 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: LCOS panel as a kind of new LCD is a sort of liquid crystal display device that operatesin a reflective mode. In this paper, a method on realising planarization in large scale liquid crystalon silicon with chemical mechanical polishing (CMP) technology is discussed in detail. The nonuniformdistributions of polishing pressure and the relative speed between the wafer and thepolishing pad are main factors affecting the within-wafer non-uniformity. This research integrateda physical mixed model of chemical-mechanical polishing that combineed the effects of polishing padroughness and slurry hydrodynamic pressure. Based on the contact mechanics and modified Reynoldsequation, the asperity contact and fluid flow pressures were calculated. Taking into account theeffects of kinematic parameters, the material removal rate(MRR) on silicon panel front surface wasobtained. In the last section the design of a schematic carrier with multi-zone, in which thecompensation back pressure can be applied, is presented. The model and the design can be used forproviding theoretical guide to the development of CMP equipments and selection of the kinematicvariables in CMP process
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/56/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.364-366.686.pdf
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  • 3
    Electronic Resource
    Electronic Resource
    Removal Process Technology of Precision Grinding for Complicated Surface Part of High Performance Hard and Brittle Materials (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 359-360 (Nov. 2007), p. 123-127 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Some key parts used in such area as the national defence are made of high performancehard and brittle materials, and they should meet not only the requirement of geometry accuracy butalso that of specified physical performance in manufacturing. The Radome is one of such key parts inthe active homing guidance weapon, with a typical complicated surface. In order to meet the electricthickness requirement, a controlled removal grinding point-by-point is needed for the radome duringits precision machining. A special 3-coordinates equipment with spherical diamond grinding wheel isadopted; the grinding paths are generated in the planes normal to the cutter axis with a Z-level profilemachining method; the feed step is determined by step screening method; and the stepping betweenlayers is carried out according to the remaining scallop crest height. Process conditions including thegrinding depth and the workpiece speed are determined through experiments, and the process errorsunder different processing conditions are analyzed to put forward an optimized processing tactics. Asa result, a basis for precision removal process of any other part of high performance hard and brittlematerials with complex surface is established, and a technology support for precision machining ofkey parts in the national major projects is provided
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/55/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.359-360.123.pdf
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  • 4
    Electronic Resource
    Electronic Resource
    Theoretical Analysis and Experimental Verification of Triangular Fracture Defects of MgO Single Crystal Substrate in Lapping or Polishing Process (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 364-366 (Dec. 2007), p. 739-744 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: MgO single crystal is mainly used as substrate for high temperature superconductor film.Surface quality of MgO substrate has significant effect on the function of high temperaturesuperconductor film. MgO single crystal is a typical hard and brittle material, and is easily cleavedalong the {100} face, so some defects are always generated on the substrate surface while lappingand polishing, which badly affects the surface quality of the substrate. In this paper, a kind oftypical defect, the triangular fracture defect which is on the substrate surface after lapping andpolishing, is analyzed in detail. According to the structure characteristics of the MgO single crystal,and based on the dislocation reaction theory, a formation mechanism of the triangular fracturedefect in lapping and polishing processes is explored. Through the single grain scratch test indifferent directions on the polished surface of MgO{100} single crystal substrates, the formationmechanism of triangular fracture defect in lapping and polishing processes is verified. And duringthe scratch test, the plastic flow of the MgO single crystal material beside the scratch was observed
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/56/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.364-366.739.pdf
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  • 5
    Electronic Resource
    Electronic Resource
    Investigation on Material Removal Rate in Rotation Grinding for Large-Scale Silicon Wafer (2004)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 471-472 (Dec. 2004), p. 362-368 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: In this paper, the formula of material removal rate (MRR) in wafer rotation grindingprocess is deduced based on kinematics. The main effect on MRR of the grit size and the process parameters, including the rotational speed of the cup grinding wheel, the down feed rate of the grinding wheel spindle and the rotational speed of the chuck table, is both theoretically and experimentally investigated. The influence on MRR of the cup wheel grinding status, the geometric dimension of the cup-grinding wheel, the rigidity of the grinding machine and the coolant is also analyzed. The investigating results show that, the increase of the grit size and the down feed rate of the cup grinding wheel results in great increase of the MRR; the MRR increases as the rotational speed of the cup wheel increases whereas the MRR reduces and the ground surface becomes bad due to size effect if the rotational speed of the cup wheel is overlarge; in normal grinding, the MRR decreases as the rotational speed of the chuck table increases. The results provide a theoretical basisto improve grinding efficiency, reduce grinding cost and select the proper parameters of grinding process
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/09/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.471-472.362.pdf
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  • 6
    Electronic Resource
    Electronic Resource
    Modeling and Analyzing on Nonuniformity of Material Removal in Chemical Mechanical Polishing of Silicon Wafer (2004)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 471-472 (Dec. 2004), p. 26-31 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Chemical mechanical polishing (CMP) has already become a mainstream technology in global planarization of wafer, but the mechanism of nonuniform material removal has not been revealed. In this paper, the calculation of particle movement tracks on wafer surface was conducted by the motion relationship between the wafer and the polishing pad on a large-sized single head CMP machine. Based on the distribution of particle tracks on wafer surface, the model for the within-wafer-nonuniformity (WIWNU) of material removal was put forward. By the calculationand analysis, the relationship between the motion variables of the CMP machine and the WIWNU of material removal on wafer surface had been derived. This model can be used not only for predicting the WIWNU, but also for providing theoretical guide to the design of CMP equipment, selecting the motion variables of CMP and further understanding the material removal mechanism in wafer CMP
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/09/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.471-472.26.pdf
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  • 7
    Electronic Resource
    Electronic Resource
    A Method for Grinding Mode Identification in Grinding of Silicon Wafers (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Advanced materials research Vol. 24-25 (Sept. 2007), p. 255-260 
    Details
    ISSN: 1662-8985
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: A new non-destructive method was developed to identify the grinding mode of siliconwafers, which is based on the information of subsurface cracks extracted from the surfacetopography of the ground silicon wafers measured with a 3D surface profiler. We examinedextensive measurement data of the surface topography of silicon wafers processed by single graingrinding or real grinding operation, and our results show that the information about median crackscould be captured if the lateral sampling interval of the 3D surface profiler is small enough, even ifthe grain depth of cut is below 20nm. If the maximum valley of the measured surface topography isapproximately equal to the grain depth of cut, surface formation will be under ductile mode,whereas, if the maximum valley is several times larger than the grain depth of cut, surfaceformation will be under brittle mode. According to this criterion, silicon wafers ground by ductilemode or brittle mode could be identified rapidly and conveniently. Experimental validation showsthat this method is accurate
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/39/transtech_doi~10.4028%252Fwww.scientific.net%252FAMR.24-25.255.pdf
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  • 8
    Electronic Resource
    Electronic Resource
    Analyzing on Nonuniformity of Material Removal in Silicon Wafer CMP Based on Abrasive Movement Trajectories (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Advanced materials research Vol. 53-54 (July 2008), p. 119-124 
    Details
    ISSN: 1662-8985
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Chemical mechanical polishing (CMP) has already become a mainstream technology inglobal planarization of wafer. The nonuniformity of material removal on wafer surface has a maininfluence on surface profile of silicon wafer in CMP process. However, the formation mechanism ofnonuniformity in wafer CMP has not been fully understood and the influences of CMP processvariables on nonuniformity are not fully clear. The nonuniformity of material removal on wafersurface has not been fully understood and the influences of CMP process variables on nonuniformityare not fully clear in CMP process. In this paper, firstly, the equation of particle movement trajectorieson wafer surface was built by the movement relationship between the wafer and the polishing pad ona single head CMP machine with line oscillation of carrier. Then the distribution of abrasivetrajectories on wafer surface was analyzed at different rotational speed. By the analysis, therelationship between the movement variables of the CMP machine and the With-In-WaferNonuniformity (WIWNU) of material removal on wafer surface had been derived. Last, the WIWNUtests were conducted on CP-4 machine. The analysis results are in accord with experimental results.The results will provide some theoretical guide for designing the CMP equipment, selecting themovement variables in CMP and further understanding the material removal mechanism in waferCMP
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/41/transtech_doi~10.4028%252Fwww.scientific.net%252FAMR.53-54.119.pdf
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  • 9
    Electronic Resource
    Electronic Resource
    Friction-Based 〈i〉In Situ 〈/i〉Endpoint Detection of Copper CMP Process (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Advanced materials research Vol. 53-54 (July 2008), p. 125-130 
    Details
    ISSN: 1662-8985
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Chemical mechanical polishing (CMP) has been extensively used in the integrate circuit(IC) manufacturing industry as a widely accepted global planarization technology, accurate in situendpoint detection of CMP process can reduce the product variance, significantly improve yield andthroughput. A CMP in situ endpoint detection system, which measured the friction and downforceduring CMP process using a specially designed three-axis strain gauge force sensor, was developed.The frictional transition from copper (Cu) to tantalum (Ta) barrier as well as Ta barrier to silicondioxide (SiO2) dielectric was detected during CMP process. The experimental results showed thatthe change of friction could be detected when the polished material changed. The developed CMP insitu endpoint detection system is feasible for 300 mm and 450 mm copper CMP process
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/41/transtech_doi~10.4028%252Fwww.scientific.net%252FAMR.53-54.125.pdf
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  • 10
    Electronic Resource
    Electronic Resource
    Novel Measurement Technique on 3D Surface Topography of Polishing Pad (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Advanced materials research Vol. 53-54 (July 2008), p. 265-272 
    Details
    ISSN: 1662-8985
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Among the properties of polishing pad, the surface roughness plays a crucial role in CMP(Chemical Mechanical Planarization) process. However, there is no acknowledged standard formeasuring and characterizing the roughness of pad surface in 3D measurement. In this paperTalysurf CLI 2000 working on the principle of dynamic confocal measurement was initiallysuggested to measure the 3D surface topography of polishing pads through theoretical andexperimental analysis. In addition, based on the Nyquist folding frequency and the statistical theory,a selection technique for sampling interval and sampling area was proposed and verified throughexperiments. The results showed that Talysurf CLI 2000 is more suitable than NewView to measurethe 3D surface topography of polishing pads. 2μm sampling interval, 0.5×0.5mm2 sampling areaand 10μm interval, 1×1mm2 area are respectively recommended for IC1000/SubaIV and SubaIVpolishing pad
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/41/transtech_doi~10.4028%252Fwww.scientific.net%252FAMR.53-54.265.pdf
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