ISSN:
1356-5362
Source:
Emerald Fulltext Archive Database 1994-2005
Topics:
Electrical Engineering, Measurement and Control Technology
Notes:
We have solved the two-dimensional Poisson's equation for short-channel device under the assumption that even in the absence of drain-to-source voltage (VDS), a potential occurs at the edges (source/drain) due to discontinuity at the semiconductor - channel interface in addition to built-in-potential. We have developed some new relations governing the operation of short-channel devices. Analysis of relation shows that in the absence of drain-to-source voltage (or for very low drain-to-source voltage), the position of minimum potential will occur exactly at the middle of the channel. The short-channel effect is not only observed due to applied drain-to-source voltage, but also due to edge potential when no bias is applied between drain and source.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1108/13565360310487918
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