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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5549-5555 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ, real-time, mass selective energy analysis of the incoming ions has been carried out during bias enhanced nucleation for diamond chemical vapor deposition. The dependence of ion energies and fluxes as a function of the bias voltage and CH4 concentration was measured. The main ionic species that strike the substrate surface during bias enhanced nucleation have energies between 50 and 80 eV and are characterized by a low H content. When the bias is lowered to the value at which nucleation enhancement becomes negligible (100 V in our system), ions have an energy of about 30–40 eV, which is the critical value for penetrating below the surface of a hydrogenated amorphous carbon layer. These findings strongly support the subplantation model of bias enhanced nucleation. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 3324-3328 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Ion beam mass spectrometry (IBMS) has been developed for in situ, real-time monitoring of the ion composition of a plasma in the vicinity of the substrate surface up to a pressure of 50 mbar. Our system was designed for the specific case of diamond deposition in a microwave plasma enhanced chemical vapor deposition chamber, however, it can be adapted to other applications as well, without significant change in the process chamber. Ion beam mass spectrometer is a quadrupole mass spectrometer (QMS) based plasma sampling system installed into a separately pumped small analysis chamber. The interface between the two chambers is the top part of the IBMS, specially designed to serve as the sample holder of the reactor chamber (sample heating and biasing is possible). A technique containing wet etching and laser treatment has been developed to form a sufficiently small orifice in various substrates. This orifice samples the particles arriving onto the surface from the plasma but is small enough to maintain the flow effusive into, and an appropriate pressure in the analysis chamber. Directly behind the orifice specially designed ion-optics direct the ions coming from the process chamber into the QMS for mass and energy separation. Since the total flow from the reactor chamber is low, the mean free path in the analysis chamber is sufficiently longer than the distance from the orifice to the QMS, therefore, ions do not collide, thus they do not react after sampling. As a consequence, nonstable species are also detected. The carefully designed ion-optics ensure that a high ion current reaches the QMS. In this article, it is shown that the intensity ratios in the spectra correspond to the concentration ratios of the ions arriving to the substrate surface. The QMS is also equipped with a conventional cross electron beam ion source allowing measurements of neutral species by conventional ionization. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    Fresenius' Zeitschrift für analytische Chemie 341 (1991), S. 57-59 
    ISSN: 1618-2650
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Summary A combined secondary ion optics has been developed which includes both the ion source for residual gas analysis and the secondary ion optics for Secondary Ion Mass Spectrometry (SIMS). The change from one mode to the other can be done by changing only the electric connections without venting the vacuum chamber. The presented combination of the two methods allows the interpretation of SIMS spectra with higher reliability.
    Type of Medium: Electronic Resource
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