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  • 1
    Electronic Resource
    Electronic Resource
    The pulsed electron–electron double resonance and "2+1" electron spin echo study of the oriented oxygen-evolving and Mn-depleted preparations of photosystem II (1998)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 108 (1998), S. 3805-3812 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A "2+1" electron spin echo method has been applied to measure the angular orientation of the radius-vector RDZ joining the redox-active tyrosine residues YD and YZ in membrane-oriented Mn-depleted preparation of photosystem II. The angle between RDZ and the normal to the photosystem II membrane was determined to be 100°±2°, where the angle of 0° corresponds to the direction from YD towards the stromal side of the membrane, along the membrane normal. A pulsed electron–electron double resonance method has been used to obtain similar information for YD and Mn cluster in oriented sample of oxygen-evolving photosystem II. The angle between the radius-vector from YD to the Mn cluster, RDMn, and the membrane normal was found to be 110°±2°. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.475770
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  • 2
    Electronic Resource
    Electronic Resource
    Bepridil Prevents Paroxysmal Atrial Fibrillation by a Class III Antiarrhythmic Drug Effect (2003)
    350 Main Street , Malden , MA 02148-5018 , USA . : Blackwell Futura Publishing, Inc.
    Pacing and clinical electrophysiology 26 (2003), S. 0 
    Details
    ISSN: 1540-8159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: YOSHIDA, T., et al.: Bepridil Prevents Paroxysmal Atrial Fibrillation by a Class III Antiarrhythmic Drug Effect. Background: Bepridil, a multiple ion-channel blocker, has been reported to prevent paroxysmal atrial fibrillation (PAF). The f-f interval of PAF during treatment with bepridil versus class Ic antiarrhythmic drugs was compared. Methods: Fifty-two patients with PAF were randomized to bepridil, 200 mg/day (n = 14) versus flecainide, 100 to 200 mg/day (n = 15) or pilsicainide, 75 to 150 mg/day (n = 23) . The drug was considered effective when symptomatic episodes of PAF were decreased to 〈 50% during a follow-up of 2 to 6 months. The f-f interval was measured in 12-lead ECGs of initial PAF episodes. Results: Bepridil and Ic were effective in 10 of 14 (71.4%) and 24 of 38 patients (63.2%), respectively (ns). In the Ic group, the f-f interval was longer in successfully (114 ± 48  ms) than in unsuccessfully (68 ± 25  ms) treated patients (P = 0.002) . In the bepridil group, the f-f interval was shorter in successfully (84 ± 27  ms) than unsuccessfully (155 ± 68  ms) treated patients (P = 0.015) . When comparing unsuccessfully treated patients, the f-f interval in the bepridil group was significantly longer than in the Ic group (P = 0.007) . Conclusions: Bepridil was as effective as Ic drugs in the prevention of PAF. Because it was more effective in smaller (functional) than larger (anatomical) reentrant circuits, the effect of bepridil was considered to be mainly attributable to a class III antiarrhythmic action. (PACE 2003; 26[Pt. II]:314–317)
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1460-9592.2003.00040.x
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  • 3
    Electronic Resource
    Electronic Resource
    Damage-Free Planarization of 4H-SiC (0001) by Catalyst-Referred Etching (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 556-557 (Sept. 2007), p. 749-751 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: We report the damage-free planarization of 4H-SiC (0001) wafers using a newplanarization technique we named CAtalyst-Referred Etching (CARE). The CARE setup equippedwith a polishing pad made of a catalyst is almost the same as a lapping setup. Since the catalystgenerates reactive species that activate only when they are next to the catalyst surface, SiC can bechemically removed in contact with the catalyst surface with a pressure noticeably lower than that ina conventional polishing process. The processed surfaces were observed by optical interferometryand AFM. These observations presented a marked reduction in surface roughness. A step-terracestructure was observed with a step height of approximately 3み, corresponding to one-bilayerthickness of Si and C, in the AFM images. To estimate the crystallographic properties of theCARE-processed surface, the surfaces were observed by cross-sectional TEM. The TEM imagesshowed that a more crystallographically well-ordered surface was realized in comparison with theconventional CMP-processed surface
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.749.pdf
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  • 4
    Electronic Resource
    Electronic Resource
    Damage-Free Planarization of 2-Inch 4H-SiC WaferUsing Pt Catalyst Plate and HF Solution (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 600-603 (Sept. 2008), p. 835-838 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: We report a damage-free and efficient planarization process for silicon carbide (SiC) usingplatinum as a catalyst in hydrofluoric acid (HF) solution. In previous studies, 4H-SiC (0001) on-axiswafers were planarized by this process and an extremely flat surface was obtained. However,electronic device substrates require off-axis wafers. In the present study, 4H-SiC (0001) 8° off-axisSi-face wafers were planarized using a Pt catalyst plate and HF solution. In the first trial using thesewafers, the surface roughness worsened and a diagonal pattern was observed by phase-shiftinterference microscopy. The pattern seemed to have been formed when the Pt plate morphology wastranscribed onto the wafer. The removal rate of the 8° off-axis Si-face wafer is much greater than thatof the on-axis Si-face wafer. Thus, we concluded that the use of a smoother catalyst plate would benecessary to obtain a smooth 8° off-axis Si-face wafer surface. Improving the Pt plate morphology byhand lapping also improved the surface roughness of the processed wafer as compared with thepreprocessed surface. The maximum height of the surface irregularity (peak-to-valley, P-V) androot-mean-square roughness were improved to 0.513 nm and 0.044 nm, respectively, as determinedby atomic force microscopy (2×2 μm2)
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.835.pdf
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  • 5
    Electronic Resource
    Electronic Resource
    Beveling of Silicon Carbide Wafer by Plasma Chemical Vaporization Machining (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 600-603 (Sept. 2008), p. 843-846 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Beveling is essential for preventing the chipping of the edge of a wafer during surfacepolishing and other processes. Plasma chemical vaporization machining (PCVM) is anatmospheric-pressure plasma etching process. It has a high removal rate equivalent to those ofconventional machining methods such as grinding and lapping, which are used for high-hardnessmaterials such as silicon carbide, due to the generation of high-density radicals inatmospheric-pressure plasma. Furthermore, PCVM does not damage the wafer surface because it is apurely chemical process; therefore, it is considered that PCVM can be used as an effective method ofbeveling the edge of SiC wafers. In this paper, we report the investigation of the beveling of SiCwafers by PCVM
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.843.pdf
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  • 6
    Electronic Resource
    Electronic Resource
    New Chemical Planarization of SiC and GaNUsing an Fe Plate in H〈sub〉2〈/sub〉O〈sub〉2〈/sub〉 Solution (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 600-603 (Sept. 2008), p. 815-818 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: A novel chemical planarization method was developed for silicon carbide (SiC) andgallium nitride (GaN). This method uses catalytically generated hydroxyl radicals (OH*) to oxidizethe wafer surface. OH* are generated by the reductive decomposition of hydrogen peroxide (H2O2)on the surface of the iron reference plate. An extremely flat surface without pits or scratches wasobtained. Atomic force microscopy (AFM) revealed that the planarized surface had an atomicstep-terrace structure, in which the step height corresponded to a single bilayer of 4H-SiC and GaN.Low electron energy diffraction (LEED) and cathodeluminescence spectroscopy showed that therewas no crystallographic damage on the planarized surface
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.815.pdf
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