Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
76 (1994), S. 509-513
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Low temperature photoluminescence (LTPL) measurements have been performed on 6H, 4H, and 15R polytype SiC crystals. In addition to well-known emission lines close to the band gap a couple of new features could be observed. Emission lines attributed to the recombination of bound excitons at aluminum acceptors have been seen in all three polytypes. A defect interpreted as a divacancy is described for SiC(4H). In SiC(6H) emission lines due to scandium centers have been observed. Furthermore the effect of a uniaxial stress on the LTPL spectrum is investigated.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.357103
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