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  • 1
    Electronic Resource
    Electronic Resource
    Low-threshold buried-ridge II-VI laser diodes (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2315-2317 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Blue-green (λ=511 nm) separate confinement laser structures based on lattice-matched MgZnSSe-ZnSSe-CdZnSe have been grown by molecular beam epitaxy. Wide stripe gain-guided devices have been fabricated from several such wafers. These devices exhibit room-temperature pulsed threshold current densities as low as 630 A/cm2 and threshold voltages less than 9 V. Using a novel self-aligned process that results in a planar surface, buried-ridge laser diodes have also been fabricated. These devices have demonstrated room-temperature threshold currents as low as 2.5 mA, which is more than a factor of 50 lower than that of any previously reported II-VI laser diode. Room-temperature operation at duty factors up to 50% has been demonstrated. The far-field patterns from these devices indicate single lateral mode operation, suitable for diffraction-limited applications, such as optical data storage.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110511
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Observation of light emission from real-space transfer devices (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1342-1344 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Light emitters based on real-space transfer devices can be brought about by several mechanisms. The most efficient of these is the injection of minority electrons across a semiconductor heterojunction into a p-type collecting layer. So far, problems associated with the growth of p-type collecting layers have hindered efforts in this area. In this letter we report on light emission caused by the real-space transfer of majority electrons into an n-type collecting layer. We propose a mechanism to account for this light which consists of hole creation by impact ionization of real-space transferred electrons.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107337
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    Paper (German National Licenses)
    Fulltext
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