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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2394-2403 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An on-chip aluminum interconnect carries an intense electric current at an elevated temperature, motivating atoms to diffuse in the solid state, and inducing voids that may cause an open failure. Recent observations have shown that a void sometimes collapses to a slit running nearly perpendicular to the electric current direction. Such a slit often lies inside a grain rather than along a grain boundary. An earlier calculation showed that diffusion on the void surface, driven by the electric current, can cause a circular void to translate in an infinite, isotropic interconnect. It was suggested recently that this solution may be unstable, and that two forces compete in determining the void stability: surface tension favors a rounded void, and the electric current favors a slit. A linear perturbation analysis, surprisingly, revealed that the translating circular void is stable against infinitesimal shape perturbation. Consequently, the slit instability must have resulted from finite imperfections. This article reviews the experimental and theoretical findings, and describes a numerical simulation of finite void shape change. We determine the electric field by a conformal mapping of complex variables, and update the void shape for a time step by a variational method. The simulation shows that a finite void shape imperfection or surface tension anisotropy can cause a void to collapse to a slit. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 754-759 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Void shape changes induced by electromigration pose reliability problems in Al-based interconnects. Recent observations have shown that a rounded void sometimes collapses to a transverse slit in an interconnect with bamboo-like grain structure. This article provides a linear stability analysis for a circular void that is only partially conductive in an otherwise infinite conductive medium. The relation between the inner conductivity (i.e., the conductivity of the medium in the void) and the critical remote electric field intensity, Ecr, for the linear stability of the void is established. It is proven that when the inner conductivity becomes zero, Ecr goes to infinity, and we can look upon the inner conductivity of a vacuum void as zero. That is why the vacuum circular void is linearly stable. It is also shown that when the inner conductivity is very small, the stability of a void is sensitive to it. From the computational results, we know that if the inner conductivity is 0.1% of that outside the void, the Ecr is only twenty times of that for the dislocation loop case. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    International journal of fracture 62 (1993), S. 269-281 
    ISSN: 1573-2673
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract In this paper, a constitutive model of elasticity coupled with damage suggested by Lemaitre et al. [1] is used. The macroscopic stress-strain response of the model includes two stages: strain hardening and strain softening. The basic equation is derived for the anti-plane shear problem. Several lowest order asymptotic solutions are obtained, and assembled for the crack-tip fields.
    Type of Medium: Electronic Resource
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