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  • 1
    Electronic Resource
    Electronic Resource
    Growth and characterization of substrate-quality ZnSe single crystals using seeded physical vapor transport (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2931-2936 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Crystallographic and optical characterization techniques were carried out on ZnSe single-crystal samples grown by the seeded physical vapor transport (SPVT) and by high-pressure Bridgman techniques. A comparison of etch pit densities shows much lower values for the SPVT material. The distribution of etch pits across a wafer is uniform in SPVT samples but extremely nonuniform in the Bridgman samples. X-ray topography studies reveal that the SPVT material has few defects and no grain boundaries while the Bridgman material shows both low and high angle grain boundaries. Photoluminescence (PL) data at 12 K on the SPVT material reveal an absence of donor acceptor pair (DAP) emissions. The spectrum is dominated by the Id1 Cu-related line and its phonon replicas and only weak Cug and Cur emissions are observed. No thermoluminescence (TL) is seen from the SPVT samples but they do give thermally stimulated conductivity (TSC) signals due to the release of holes from CuZn centers with activation energies of 0.33 eV and 0.71 eV. Only hole states are seen in the SPVT material. In contrast the Bridgman samples show intense DAP PL lines, as well as Id1 lines. They show Cug and Cur emission, give strong TL and TSC signals, and reveal an array of both electron and hole states.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351026
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  • 2
    Electronic Resource
    Electronic Resource
    High-brightness blue and green light-emitting diodes (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 115-117 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report high-brightness blue and green light-emitting diodes (LEDs) based on II–VI heterostructures grown by molecular beam epitaxy on ZnSe substrates. The devices consist of a 2–3 μm thick layer of n-type ZnSe:Cl, a ∼0.1 μm thick active region of Zn0.9Cd0.1Se (blue) or ZnTe0.1Se0.9 (green), and a 1.0 μm thick p-type ZnSe:N layer. The blue LEDs produce 327 μW (10 mA, 3.2 V), with the light output sharply peaked at 489 nm, and exhibit an external quantum efficiency of 1.3%. The green LEDs produce 1.3 mW (10 mA, 3.2 V) peaked at 512 nm, corresponding to an external quantum efficiency of 5.3%. In terms of photometric units, the luminous performance (luminous efficiency) of the devices is 1.6 lm/W (blue) and 17 lm/W (green), respectively, when operated at 10 mA. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113534
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    Paper (German National Licenses)
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