Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
65 (1994), S. 737-739
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report a boron δ-doping layer in crystalline silicon with an electrically active concentration of 1×1022 cm−3 and a mobility of ∼20 cm2/V s. This structure was fabricated by low-temperature molecular-beam epitaxy with boron confined to 3 monolayers in the silicon growth direction. Complete electrical activation is observed, showing metallic conduction down to 4 K. This two-dimensional doped layer, incorporated into the crystal lattice, represents a volume concentration exceeding the solid solubility of boron in silicon by two orders of magnitude. These high-concentration structures fill an unexplored region of the mobility versus concentration curve.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.112215
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