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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Macromolecules 18 (1985), S. 2478-2486 
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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  • 2
    Electronic Resource
    Electronic Resource
    New York, NY [u.a.] : Wiley-Blackwell
    Journal of Applied Polymer Science 37 (1989), S. 695-705 
    ISSN: 0021-8995
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: A technique for determining radiation chemical yields from lithographic exposure curves for crosslinking type negative electron beam resists has been extended to include polymers with a general Poisson distribution. The technique is applied to several different chlorine-containing styrene-based resists. The radiation yields show good agreement with the differences in lithographic sensitivity and are explained by recent mechanistic studies. Optimal synthetic approaches for preparing this type of resist are described.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    New York, NY : Wiley-Blackwell
    Polymers for Advanced Technologies 5 (1994), S. 12-21 
    ISSN: 1042-7147
    Keywords: Photoresists ; Lithography ; Argon fluoride excimer laser ; Surface imaging ; Silylation ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: A review of recent efforts to develop photoresist materials and processes for 193 nm (ArF excimer laser) photolithography is reported. Three categories of resist processes are discussed: (1) conventional single layer, (2) bilayer and (3) surface-imaged resist processes. To date, materials have been developed for each process which exhibit resolution to less than 0.25 μm with sensitivities of less than 50 mJ/cm2.
    Additional Material: 10 Ill.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 4 (1994), S. 165-175 
    ISSN: 1057-9257
    Keywords: Simulation ; Modelling ; Resists ; Chemical mechanisms ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Simulation of lithographic processes uksing novolac/diazonaphthoquinone resists has become widespread over the past 15 years. Several refinements to the original Dill model have been made to account for experimentally observed behavior. Models have also bee extended to cover other resist chemistry, including electron beam resists, chemically amplified resists and surface-imaging approaches. While these models are not yet mature, useful insight to the chemical mechanisms and processing can be gained through their use.
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
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