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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2435-2441 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Powdered samples of the type Ce1−xRExO2−y, where RE=La, Pr, Nd, Eu, Gd, and Tb, are synthesized over the range 0≤x≤0.5 starting from nitrate solutions of the rare earths. X-ray diffraction and Raman scattering are used to analyze the samples. These compounds, at least in the low doping regime and for strictly trivalent dopants, form solid solutions that maintain the fluorite structure of CeO2 with a change in lattice constant that is approximately proportional to the dopant ionic radius. The single allowed Raman mode, which occurs at 465 cm−1 in pure CeO2, is observed to shift to lower frequency with increasing doping level for all the rare earths. However, after correcting for the Grüneisen shift from the lattice expansion, the frequency shift is actually positive for all the strictly trivalent ions. In addition, the Raman line broadens and becomes asymmetric with a low frequency tail, and a new broad feature appears in the spectrum at ∼570 cm−1. These changes in the Raman spectrum are attributed to O vacancies, which are introduced into the lattice whenever a trivalent RE is substituted for Ce4+. This conclusion is supported by a simple model calculation of the effects of O vacancies on the Raman spectrum. The model uses a Green's function technique with the vacancies treated as point defects with zero mass.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1923-1926 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new superlattice system suitable for infrared detection in the 8–12 μm wavelength range is proposed. The system is a sawtooth doping superlattice (SDS) constructed by alternating n- and p-type δ-doped layers in the narrow gap III-V alloy InAs1−xSbx(x≈0.6). The electronic structure of such materials is examined theoretically using a multiband envelope function formalism. The results indicate that, with relatively modest doping levels (〈4×1012 cm−2) and short periods (〈300 A(ring)), an InAs0.4Sb0.6SDS exhibiting significant optical absorption out to 12 μm at 77 K should be possible.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 98 (1993), S. 2258-2262 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We examine a simple model of the liquid state of an electrorheological fluid, with emphasis on the role of many-particle (local-field) effects. The induced dipole moments are treated as internal degrees of freedom. The distribution function for these dipole moments is calculated self-consistently within the mean-spherical approximation (MSA). The present MSA formalism is more rigorous and slightly more general than the "mean-field'' treatment by Adriani and Gast [Phys. Fluids 31, 2757 (1988)]. We also use a more accurate MSA correlation function which leads to numerical results suggestive of a phase transition out of the liquid state at a critical value of the dimensionless dipole interaction strength.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 123-125 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Raman and infrared absorption spectra, optical gaps, and electron spin densities of amorphous carbon films deposited from hydrocarbon plasmas have been systematically studied as a function of deposition conditions and Raman probe wavelength. Although all other probes are consistent with a monotonic increase in intermediate-range order with substrate bias voltage Vb, the optical gap decreases with increasing Vb (consistent with increasing graphitic domain size) only up to the onset of sputtering, where the gap sharply increases. We propose a simple structural model for a-C:H which is consistent with these results and requires no sp3 bonding.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Springer
    Journal of computer-aided materials design 3 (1996), S. 210-212 
    ISSN: 1573-4900
    Keywords: Zeolites ; Catalysts ; Ion exchange ; Density functional theory
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Summary Recent progress in the modelling of exchanged Cu sites and their interactions with small molecules, based on DFT cluster calculations, is briefly reviewed.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Springer
    Journal of low temperature physics 39 (1980), S. 329-337 
    ISSN: 1573-7357
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Measurements are presented of the resistivity in samples of (Nb0.99Ti0.01)1−x Gex, 0.17 ⩽ x ⩽ 0.24, from the superconducting transition temperature T cto 300 K. The T cattains its maximum value of above 22 K and the residual resistivity its minimum value at the same off-stoichiometric composition when x = 0.205. At this same value of x the transition width is narrowest and the residual resistivity extrapolates to a finite value, indicating a comparatively low resistance ratio is to be expected. The resistance ratio achieved in these samples with Ti substitution is comparable to that achieved in the best samples of pure Nb3Ge and is indicative of the short mean free path in this system.
    Type of Medium: Electronic Resource
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