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  • 1
    Electronic Resource
    Electronic Resource
    Parallel quantum-point-contacts as high-frequency-mixers (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3251-3253 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The results of high-frequency mixing experiments performed upon parallel quantum point contacts defined in the two-dimensional electron gas of an AlxGa1−xAs/GaAs heterostructure are presented. The parallel geometry, fabricated using a novel double-resist technology, enables the point-contact device to be impedance matched over a wide frequency range and, in addition, increases the power levels of the mixing signal while simultaneously reducing the parasitic source-drain capacitance. Here, we consider two parallel quantum point-contact devices with 155 and 110 point contacts, respectively; both devices operated successfully at liquid helium and liquid nitrogen temperatures with a minimal conversion loss of 13 dB. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119139
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    X-ray imaging and diffraction from surface phonons on GaAs (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1709-1711 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface acoustic waves (SAWs) are excited on the GaAs (001) surface by using interdigital transducers, designed for frequencies of up to 900 MHz. The emitted phonons with wavelengths down to 3.5 μm are visualized and characterized by combined x-ray diffraction techniques. Using stroboscopic topography, the SAW emission of a parallel and a focusing transducer geometry are imaged. High-resolution x-ray diffraction profiles show up to 12 phonon-induced satellite reflections besides the GaAs (004) reflection, with a width of 9 arcsec each. The diffraction pattern is simulated numerically, applying the kinematical scattering theory to a model crystal. From fits to measured diffraction profiles at different excitation voltages, the SAW amplitudes were calculated and found to be in the sub-nm range. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124797
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Lateral tunneling through the controlled barrier between edge channels in a two-dimensional electron system (1999)
    Springer
    JETP letters 69 (1999), S. 603-609 
    Details
    ISSN: 1090-6487
    Keywords: 73.40.Gk ; 73.40.Hm
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract A study is made of the lateral tunneling between edge channels at the depletion-induced edges of a gated two-dimensional electron system, through a gate-voltage-controlled barrier arising when the donor layer of the heterostructure is partly removed along a fine strip by means of an atomic force microscope. For a sufficiently high barrier the typical current-voltage characteristic is found to be strongly asymmetric, having, in addition to the positive tunneling branch, a negative branch that corresponds to the current overflowing the barrier. It is established that the barrier height depends linearly on both the gate voltage and the magnetic field, and the data are described in terms of electron tunneling between the outermost edge channels.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.567967
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    Paper (German National Licenses)
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