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  • 1
    Electronic Resource
    Electronic Resource
    Self-limiting and pattern dependent oxidation of silicon dots fabricated on silicon-on-insulator material (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 4580-4585 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a systematic investigation of the oxidation properties of Si dots fabricated on a silicon-on-insulator (SOI) wafer. Dots with diameters varying from 9 to 81 nm were structured on a SOI wafer. These dots were oxidized in a dry oxygen atmosphere at 700, 850, and 1000 °C. The resulting structures were investigated using a side view transmission electron microscopy (TEM) technique in combination with energy filtered TEM. The dimensions of the residual Si and the grown SiO2 were then extracted from the micrographs and analyzed. The oxidation appears to be retarded as compared to the well-known planar oxidation. At 700 and 850 °C a self-limiting effect is observed as well as a clear pattern dependent oxidation at 850 and 1000 °C. We attribute these effects to stress buildup in the oxide. The critical stress, causing the self-limiting effect, is calculated using a model that considers the decrease of the reaction rate with increasing stress perpendicular to the Si surface. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373105
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  • 2
    Electronic Resource
    Electronic Resource
    Closely stacked InAs/GaAs quantum dots grown at low growth rate (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1544-1546 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a systematic study of closely stacked InAs/GaAs quantum dots (QDs) grown at low growth rates. Transmission electron microscopy reveals that for thin spacer layers vertically aligned QDs merge into one large QD. After capping the initial QD layer the GaAs surface is decorated with well-developed nanostructures, which act as nucleation centers for the QDs deposited in the second layer. Despite the size increase, photoluminescence (PL) experiments show a systematic blueshift up to 103 meV of the QD related signal with decreasing spacer thickness. We explicitly show that this significant blueshift cannot fully be ascribed to specific growth phenomena, but instead is caused by the actual presence of the second dot layer. We report a PL linewidth as narrow as 16 meV at low temperature for a sample with 5 nm spacer thickness. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1456954
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    Paper (German National Licenses)
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