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  • 1
    Electronic Resource
    Electronic Resource
    Luminescence of thulium in III-V semiconductors and silicon (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1919-1926 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thulium (Tm) emissions were investigated in 390 keV, Tm-implanted AlGaAs, GaAs, InP, and Si using photoluminescence spectroscopy. The emissions in the different semiconductors were observed in the 1.20 to 1.35-μm region and are attributed to transitions between the crystal-field-split spin–orbit levels 3H5– 3H6 of Tm3+ (4f12). The main emission in GaAs is located at 1.233 μm and shows doublet structure with a width for each component of better than 0.15 meV at 6 K. Anneal temperature dependent studies identify multiple sites as the source of the Tm3+ emissions. The optimum anneal temperatures of Tm-implanted GaAs and AlGaAs are between 725 and 750 °C, for 10- or 15-min anneals, whereas InP:Tm appears to have the strongest emissions in the 575 to 625 °C temperature range. The intracenter Tm3+ emissions for Si:Tm were observed at 850 °C. Sample temperature dependent studies of Tm3+ emissions show that the sharp emissions can be seen to as high a temperature as 240 K for specific samples. Luminescence intensity studies as a function of excitation laser power in GaAs:Tm and AlGaAs:Tm exhibit a sublinear relationship. Lifetime measurements at 10 K of the main 1.233-μm line found two decay components with times of 0.5±0.3 μs and 2.6±0.3 μs. Selective excitation studies indicate that free carriers and/or excitons are involved in the excitation of the Tm centers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351181
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  • 2
    Electronic Resource
    Electronic Resource
    Study of the broad luminescence bands in Ge-implanted GaAs centered at 1.44–1.46 eV (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4634-4636 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Above- and below-band-gap excitation photoluminescence studies were performed on GaAs samples implanted with Ge, Ga, As, {Ge+Ga}, and {Ge+As} to assess the nature of a broad luminescence band, the so-called Q band, centered in the 1.44–1.46-eV range. Below-band-gap excitation enabled resolution of the broad band into two separate overlapping bands. These measurements, in conjunction with sample temperature-dependent studies, indicate that the main contribution to the broad band observed in Ge-implanted GaAs is due to the Ga antisite double-acceptor defect.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349075
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  • 3
    Electronic Resource
    Electronic Resource
    Er-related deep centers in GaAs doped with Er by ion implantation and molecular beam epitaxy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3919-3926 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep level transient spectroscopy (DLTS) and temperature-dependent Hall effect measurements were performed on undoped, n-, and p-type GaAs doped with Er either by ion implantation or during molecular beam epitaxial (MBE) crystal growth. For light Er doping ((approximately-less-than)1017 cm−3), a hole trap was observed at 35 meV above the valence band, whereas for heavier doping ((approximately-greater-than)5×1017 cm−3), a hole trap was observed at 360 meV. Both traps were found in both ion implanted and MBE materials. The 35 meV center is attributed to the Er atom occupying the Ga site and acting as an isovalent impurity, whereas the 360 meV center is attributed to Er in an interstitial position. Furthermore, photoluminescence and DLTS measurements of Er-implanted GaAs revealed that both the Er3+ intra-4f-shell emission intensity and concentration of the deep 360 meV centers were maximized at an annealing temperature of 750 °C, and they decreased at higher temperature anneals, while the concentration of the shallow 35 meV centers increased. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358571
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  • 4
    Electronic Resource
    Electronic Resource
    Junction characteristics of Ga0.5In0.5P n+p diodes and solar cells (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5763-5772 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Forward and reverse bias dark current characteristics of n+p mesa diodes and solar cells fabricated from metalorganic chemical vapor deposition grown Ga0.5In0.5P have been examined, and dark current behavior has been correlated with Ga0.5In0.5P solar cell conversion efficiency. Dependencies of dominant dark currents on voltage, temperature, and doping density were found to be consistent with recombination theory. Recombination dark current with an ideality factor of A=1.9–2.1 was dominant in the voltage range of ∼0.5 to 1.5 V and ∼0.8 to 1.2 V for devices with a p-base doping density of ∼1016 and 1017 cm−3, respectively. Reverse current-voltage-temperature measurements identified two dominant deep levels at 0.10 and ∼0.45 eV relative to either the valence- or conduction-band minimum. The carrier recombination was found to occur through these deep level centers in the n+p junction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359221
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  • 5
    Electronic Resource
    Electronic Resource
    Growth of Er-doped silicon using metalorganics by plasma-enhanced chemical vapor deposition (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 551-558 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial growth of Er-doped silicon films has been performed by plasma-enhanced chemical vapor deposition at low temperature (430 °C) using an electron cyclotron resonance source. The goal was to incorporate an optically active center, erbium surrounded by nitrogen, through the use of the metalorganic compound tris (bis trimethyl silyl amido) erbium. Films were analyzed by Rutherford backscattering spectrometry, secondary ion mass spectroscopy, and high resolution x-ray diffraction. The characteristic 1.54 μm emission was observed by photoluminescence spectroscopy. Previous attempts to incorporate the complex (ErO6) using tris (2,2,6,6-tetramethyl- 3,5-heptanedionato) erbium (III) indicated that excessive carbon contamination lowered epitaxial quality and reduced photoluminescent intensity. In this study, chemical analysis of the films also revealed a large carbon concentration, however, the effect on epitaxial quality was much less destructive. A factorial design experiment was performed whose analysis identified the key processing parameters leading to high quality luminescent films. Hydrogen was found to be a major cause of crystal quality degradation in our metalorganic plasma-enhanced process. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362759
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  • 6
    Electronic Resource
    Electronic Resource
    Junction characteristics of electron-irradiated Ga0.5In0.5P n+-p diodes and solar cells (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 3700-3706 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of 1 MeV electron irradiation on n+-p mesa diodes and solar cells fabricated from metalorganic chemical vapor deposition grown Ga0.5In0.5P on GaAs have been studied. Upon electron irradiation, Ga0.5In0.5P n+-p junction dark current increased by more than one order of magnitude, but it could be reduced by about 75% after annealing at 250 °C for 10 min. The increase in junction dark current was mainly attributed to reductions in minority carrier lifetimes. It was also found that Ga0.5In0.5P solar cell open-circuit voltage, short-circuit current, fill factor, and air-mass zero conversion efficiency were all reduced on the average by 11%, 18%, 8%, and 33%, respectively, following exposure to 1016 electrons/cm2. However, a significant improvement in the electron-irradiated Ga0.5In0.5P solar cell efficiency was observed via thermal annealing at 250 °C, demonstrating good potential for a longer solar cell lifetime in space through on-orbit thermal annealing. The degradation in solar cell conversion efficiency following 1 MeV electron irradiation was smaller than that observed in Si and GaAs, but greater than that in InP solar cells.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365491
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  • 7
    Electronic Resource
    Electronic Resource
    Optical characterization of molecular beam epitaxially grown InAsSb nearly lattice matched to GaSb (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 480-488 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Molecular beam epitaxially (MBE)-grown InAsSb nearly lattice matched to (001) GaSb substrates has been studied by infrared absorption, photoluminescence (PL), and double crystal x-ray diffraction (DCXRD). The absorption measurements, made at temperatures of 6–295 K, resulted in determinations of the temperature and compositional dependencies of the energy gap and the absorption coefficients for InAs1−xSbx (0≤x≤0.192). Temperature- and laser excitation power-dependent PL measurements showed only a single band edge peak for the ternary samples (Δa/a≤+0.623%). Both low temperature PL linewidths (as narrow as 4.3 meV) and observations of LO-phonon replicas indicate the good quality of this material. However, careful analysis of the PL data indicates that even this good material may have a tendency for phase separation resulting in compositional inhomogeneity as reported previously for MBE-grown InAsSb. (004) DCXRD measurements resulted in lattice mismatches between −0.629%≤Δa/a≤+0.708% for these samples, while (115) DCXRD measurements indicated that tensile strain persisted in the epilayers, even for thicknesses up to 1.4 μm. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368051
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  • 8
    Electronic Resource
    Electronic Resource
    Evaluation of carrier distributions in a depletion region of semiconductor measured by a capacitance-voltage profile method (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 75-77 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is well known that carrier depth profiles obtained by the capacitance-voltage (C-V) measurement method provide carrier information only beyond the initial semiconductor depletion region. A novel new method has been developed within the depletion approximation for obtaining carrier depth profiles inside the initial depletion region of a semiconductor through the combined use of the layer-removal technique and C-V profile measurements. This method has been successfully demonstrated through simulated C-V profile data created from a known Gaussian distribution of Si-implanted GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102656
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  • 9
    Electronic Resource
    Electronic Resource
    Excited states of the Mg acceptor in GaAs (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 6761-6766 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Selective pair luminescence (SPL) has been used to measure the excited states of shallow acceptors in undoped vapor-phase epitaxial (VPE) grown GaAs and Mg-implanted VPE GaAs. A set of experimental data for Mg excited states in GaAs is presented here. The results show that the 2P3/2 -, 2S3/2 -, and 2P5/2 -1S3/2 energy differences are 17.0, 20.0, and 21.0 meV, respectively. The value of the 2S3/2 state agrees very well with the previously reported two-hole transition luminescence result, and the other two values for the excited states agree very well with those reported for far-infrared Fourier transform spectroscopy. This assignment was further confirmed by making SPL measurements on Mg-implanted GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342009
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  • 10
    Electronic Resource
    Electronic Resource
    Surface-depletion effect correction to nonuniform carrier distributions by Hall measurements (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 5070-5075 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Significant errors in the determination of carrier profiles obtained by the Hall-effect method result if the depletion effect at a semiconductor surface is not taken into account. A practical procedure for correcting the apparent measured carrier profiles for this surface-depletion effect is described for nonuniformly doped semiconductors. This correction method is then applied to Si-implanted GaAs and the results are compared with those of capacitance-voltage measurements. The number of total trapped charges in free-surface states are estimated to be about 1×1012 cm−2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338331
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