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  • 1
    Electronic Resource
    Electronic Resource
    Angular spectroscopic analysis: An optical characterization technique for laterally oxidized AlGaAs layers (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 5265-5267 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present an optical characterization technique to determine both the refractive index and the shrinkage of laterally oxidized AlAs and AlGaAs layers. The technique consists of measuring the angular dependence of the Fabry-Pérot dip wavelength in a simple cavity structure. Over standard ellipsometry, it has the advantage of measuring more realistic layer structures. Over transmission electron microscopy cross sections to determine the final aluminum-oxide layer thickness, it has the benefit of performing the measurement without elaborate sample preparation. We find that AlAs shrinks by approximately 3% during oxidation, and that the refractive index of oxidized AlAs is 1.52. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366395
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  • 2
    Electronic Resource
    Electronic Resource
    Space-charge-limited currents in materials with Gaussian energy distributions of localized states (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 4154-4156 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model is formulated describing trap-controlled space-charge-limited currents (SCLCs) in an organic material with a Gaussian density-of-states (DOS) distribution. It is shown that SCLC is not always controlled by carrier release from localized states around the Fermi level and, therefore, a Gaussian DOS can serve as either shallow or deep distribution of localized states depending upon the carrier and/or current density. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1424046
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  • 3
    Electronic Resource
    Electronic Resource
    Light-emitting diodes with 31% external quantum efficiency by outcoupling of lateral waveguide modes (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2256-2258 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The external quantum efficiency of light-emitting diodes (LEDs) is usually limited by total internal reflection at the semiconductor–air interface. This problem can be overcome by a combination of light scattering at a textured top surface and reflection on a backside mirror. With this design, we achieve 22% external quantum efficiency. One of the main loss mechanisms in such nonresonant cavity (NRC) light-emitting diodes is coupling into an internal waveguide. Texturing the surface of this waveguide allows the partial extraction of the confined light. In this way, we demonstrate an increase in the external quantum efficiency of NRC-LEDs to 31%. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123817
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  • 4
    Electronic Resource
    Electronic Resource
    Receiver with optical thyristors operating at 155 Mbit/s with 3 femto-Joule optical inputs (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 750-752 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A receiver for digital optical inputs is presented which is based on a differential pair of optical thyristors. Modification of the conventional differential pair allows the electrical readout of its ON and OFF states. Optical input pulses with an energy of about 3 femto-Joule (at a wavelength of 830 nm) are sufficiently large for detection. In its present size, the receiver works up to 155 Mbit/s. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118269
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  • 5
    Electronic Resource
    Electronic Resource
    Depleted double-heterojunction optical thyristor (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 2073-2075 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel double-heterojunction PnpN optical thyristor is presented in which both the center n-layer and the center p-layer are completely depleted at equilibrium. This structure is an extremely attractive optoelectronic switch, because it allows the marriage of two usually incompatible features: speed and optical sensitivity. The speed results from the fact that our PnpN-structure can be reset to equilibrium, from any point on the current-voltage characteristics, in less than 10 ns by means of a simple negative anode-to-cathode voltage pulse. The optical sensitivity is a direct consequence of the center n- and p-layers being completely depleted of free carriers at equilibrium. We show experimental evidence of this reset operation by studying the dynamics of the free-carrier extraction from the center n- and p-layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111687
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  • 6
    Electronic Resource
    Electronic Resource
    InAs p-n diodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 868-870 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InAs p-n diodes have been grown on GaAs and GaAs-coated Si substrates by molecular beam epitaxy. Transmission electron microscopy cross sections of the epilayers demonstrate a good structural quality. Photodiodes were obtained using a Be (p=5×1016 cm−3) and Si (n=3×1016 cm−3) doping scheme. The diodes exhibited 77 K zero-bias resistance area products of 2200 Ω cm2 for InAs/GaAs and 1500 Ω cm2 for InAs/GaAs/Si. The spectral response of the devices peaked at 2.95 μm with Johnson noise limited detectivities D* of 7.0×1011 cm Hz1/2/W for InAs/GaAs and 5.8×1011 cm Hz1/2/W for InAs/GaAs/Si. These results clearly demonstrate the feasibility of the monolithic integration of InAs infrared detectors and GaAs or Si read-out electronics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106490
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  • 7
    Electronic Resource
    Electronic Resource
    Highly sensitive NpnP optoelectronic switch by AlAs regrowth (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 497-498 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A double-heterostructure NpnP optoelectronic switching device, with an extreme optical sensitivity and low holding power, has been fabricated. A decrease in breakover voltage of 650 mV is obtained at a light illumination of only 5 nW for a 50×50 μm2 device. To achieve this high sensitivity, the surface generation/recombination currents at the edges of the devices have been reduced by passivating the device perimeter with a regrowth of 50 nm AlAs (lowly p doped).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105418
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  • 8
    Electronic Resource
    Electronic Resource
    Differential optical PnpN switch operating at 16 MHz with 250-fJ optical input energy (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 19-21 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present an optoelectronic switch with exceptional optical sensitivity (250 fJ) operating at high speed (16 MHz). The switch consists of a differential pair of optical PnpN devices. Its excellent optical sensitivity directly ensues from the differential switching principle. The operation speed results from the use of a specially conceived PnpN layer structure, called the depleted optical thyristor, in combination with a particular operation cycle. The performance of our switch corresponds to an improvement of about five orders of magnitude in speed for comparable sensitivity, and of two orders of magnitude in optical sensitivity for the given speed as compared to that of conventional PnpN switches.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113058
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  • 9
    Electronic Resource
    Electronic Resource
    Fast turn-off of two-terminal double-heterojunction optical thyristors (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1326-1328 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A double-heterojunction optical thyristor is presented, that can be turned off in a few nanoseconds simply by using the anode to a negative voltage exceeding a certain threshold. Previously, nanosecond-range turn-off could only be achieved by carrier extraction via contacts to either or both of the center two thyristor layers. Our turn-off method uses a PnpN layer structure for which punch-through of the n-layer under reverse bias of the P-n diode can be reached before this diode breaks down. We thus achieve an improvement in turn-off time by about 3 orders of magnitude over traditional two-terminal thyristors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107581
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  • 10
    Electronic Resource
    Electronic Resource
    InAs0.85Sb0.15 infrared photodiodes grown on GaAs and GaAs-coated Si by molecular beam epitaxy (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 3256-3258 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the first InAs0.85Sb0.15 infrared photodiodes, grown on GaAs and GaAs-coated Si substrates by molecular beam epitaxy. Transmission electron microscopy images reveal a good structural quality. The electrical characteristics of the photodiodes were analyzed using current-voltage, current-temperature, and capacitance-voltage measurements. The spectral response and detector noise were measured at 77 K, resulting in a peak detectivity at 3.8 μm of 1.5×1011 cm Hz1/2/W for InAs0.85Sb0.15/GaAs and 5.0×1010 cm Hz1/2/W for InAs0.85Sb0.15/GaAs/Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106711
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