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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 93 (1990), S. 4377-4382 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Stimulated inverse Raman spectroscopy is used to investigate exciton–phonon coupling in the polydiacetylene PTS. The Raman resonances used the v=0 and one v=1 singlet exciton as intermediate states, and the consequent Stark shiftings and splittings of the excitons are measured. We use these optical Stark effects to determine the coupling between the ground state phonons and the v=0 exciton. This coupling is as strong for the combination modes as for the fundamental modes. The coupling between several combinations modes and the v=1 exciton is 4 to 10 times greater than it is for the v=0 exciton, in agreement with calculations of the overlap integrals for each transition.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5443-5449 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carrier lifetime has been measured by the luminescence decay of a 1.3-μm-InGaAsP layer excited by a mode locked YAG laser at 1.06 μm. The measurements have been done as a function of excitation intensity for nearly three orders of magnitude of carrier concentration (4×1016–2×1019 cm−3) and for different temperatures (between 32 and 346 K). At low and moderate carrier density, the lifetime τ follows the variation with excitation of the theoretical radiative lifetime. At high carrier density (above 1018 cm−3) the carrier decay rate increases more rapidly than the radiative one and around room temperature this can be accounted for by an additional recombination mechanism whose variation with excitation is typical of an Auger process. The Auger coefficient (Ca=2.6×10−29 cm6 s−1) does not vary with temperature within experimental uncertainty. This suggests that though Auger recombination is for a large part responsible for the low T0 value of 1.3-μm InGaAsP lasers, the temperature dependence of the Auger coefficient does not contribute to it.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 98 (1993), S. 7792-7803 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We present a theoretical study on optimal control of the electric susceptibility change of a homogeneous molecular gas resulting from orientational anisotropy induced by nonresonant lasers with limited intensity. It is assumed that the molecular gas is initially in thermal equilibrium. Two types of optimal control objectives have been considered: terminal control and temporal profile control (i.e., trajectory control). A step function is introduced into the cost functionals which successfully helps to realize the restriction on the magnitude of the field amplitude in numerical optimization, as demonstrated by the examples. Calculations are carried out for CS2 which has a small rotational constant (B=0.1091 cm−1) and a quite large polarizability anisotropy (Δα=9.6 A(ring)3). For terminal control of a maximal susceptibility change at a target time T, it is found that the optimal control field is composed of a series of rectangular pulses with identical amplitudes equal to a preassigned bound value. All of the optimal fields for terminal control are functions of (T−t) over the time interval [0,T] with characteristic time 1/8B and period 1/2B. For temporal profile control, the degree of control is strongly dependent on the length of time interval over which a target profile is defined. Usually, if a time interval is shorter than 1/8B and a target profile is a smooth and non-negative function with a reasonable maximal value, the control can be achieved perfectly. In other cases the detailed assignment of the weight function in the cost functional plays an important role in determining how to make an optimally controlled susceptibility change profile approach the target profile. Furthermore, we have also examined the temperature effects on optimal control in this paper. It can be shown that the general optimal control properties observed by CS2 will also be valid for other linear molecular gases with small rotational constants.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1432-0649
    Keywords: 42.55.Px ; 42.65.-k
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract We describe the generation of femtosecond high power optical pulses using hybrid passive-active mode-locking techniques. Angle stripe geometry GaAs/AlGaAs semiconductor laser amplifiers are employed in an external cavity including prisms and a stagger-tuned quantum-well saturable absorber. An identical amplifier also serves as an optical power amplifier in a stretched pulse amplification and recompression sequence. After amplification and pulse compression this laser system produces 200 fs, 160 W peak power pulses. We discuss and extend our theory, and supporting phenomenological models, of picosecond and subpicosecond optical pulse amplification in semiconductor laser amplifiers which has been successful in calculating measured spectra and time-resolved dynamics in our amplifiers. We have refined the theory to include a phenomenological model of spectral hole-burning for finite intraband thermalization time. Our calculations are consistent with an intra-band time of approximately 60 fs. This theory of large signal subpicosecond pulse amplification will be an essential tool for understanding the mode-locking dynamics of semiconductor lasers and for analysis of high speed multiple wave-length optical signal processing and transmission devices and systems based on semiconductor laser amplifiers.
    Type of Medium: Electronic Resource
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