ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Low temperature deposition of HfO2 films on 4H-SiC(0001) substrates by pulseintroduced metalorganic chemical vapor deposition (MOCVD) using tetrakis-diethylamido-hafnium[Hf[N(C2H5)2]4, (TDEAH)] and H2O has been investigated. HfO2 films with relatively low leakagecurrent density of 10-4 A/cm2 were obtained even at a deposition temperature as low as 190 ºC. Wedemonstrate that the HfO2/SiC interface, where the HfO2 was deposited at 190 ºC, has lower interfacestate density than a typical thermally-grown SiO2/SiC interface. It is also shown by X-rayphotoelectron spectroscopy (XPS) that the HfO2/SiC structure fabricated at 190 ºC has lower SiOxcount than the HfO2/SiC structure fabricated at 400 ºC
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.1079.pdf
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