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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 3450-3456 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous SrTiO3 on single crystal SrTiO3 (100) has been crystallized by He+, Ne+, or Ar+ ions with energy of 200 keV–2 MeV at a substrate temperature of 100–250 °C. Rutherford backscattering spectrometry in channeling geometry and x-ray diffraction were used to evaluate the crystallization. Ion-beam-induced epitaxial crystallization (IBIEC) of SrTiO3 was confirmed and the activation energy of IBIEC observed was about 0.1–0.3 eV, a value about 1/10 relative to thermal solid phase epitaxial crystallization. The observed IBIEC seems to be consistent with previously proposed models in which IBIEC is dominated by point defects produced by ion irradiation and their migration to the amorphous/crystal (a/c) interface. The IBIEC mechanism and point defect behavior are discussed by the use of simple models taking into account the rate limiting processes of IBIEC for both point defect diffusion and atomic rearrangement at a/c interface. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    The European physical journal 38 (2004), S. 111-115 
    ISSN: 1434-6036
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract. Surface structures in the Te/Ni(111) system are revealed by using reflection high-energy electron diffraction combined with X-ray and ultraviolet photoelectron spectroscopies. At a 0.33 mono-layer (ML)-Te/Ni(111) surface, a reversible structural phase transition is observed with a transition temperature T c of 380 $^{\circ}$ C. The diffraction pattern from the low temperature phase is accompanied by streaks. The high and low temperature phases are characterized by $\sqrt{3} \times \sqrt{3} R\pm30^{\circ}$ and $3 \times \sqrt{3}$ rectangle, respectively. The mechanism of the phase transition is explained by the order-disorder transition with a rumpled chain model. Both 0.51 ML- and 0.44 ML-Te/Ni(111) surfaces exhibit the complex diffraction patterns accompanied by diffuse streaks. These surface structures are characterized by the $7 \times \sqrt{3}$ rectangle and $5 \sqrt{3} \times \sqrt{3} R \pm30^{\circ}$ , respectively. All diffuse streaks obtained at the above surfaces are consistently interpreted in the view of the ill-ordered arrangements of the well-ordered $\sqrt{3}$ linear chains. It is shown that the “ $\sqrt{3}$ linear structure” is the key in the Te/Ni(111) system.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    Naturwissenschaften 74 (1987), S. 241-242 
    ISSN: 1432-1904
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Chemistry and Pharmacology , Natural Sciences in General
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1432-0630
    Keywords: PACS: 78.70.Bj; 61.80.-x
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: + and O+ ions was exposed to positron beams to measure the positron annihilation Doppler broadening as a function of the positron energy. As in the previous case of O+-irradiated semicrystalline PEEK, the annihilation lines recorded at relatively low positron energies became broader with increasing irradiation dose. The thickness of the damaged layer estimated from the positron data was compared with the mean depth of the implanted ions calculated by the TRIM code. For the Au+-irradiated samples, some discrepancy was observed between the two quantities.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Nuclear Inst. and Methods in Physics Research, B 94 (1994), S. 411-416 
    ISSN: 0168-583X
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Springer
    Journal of thermal analysis and calorimetry 60 (2000), S. 675-681 
    ISSN: 1572-8943
    Keywords: calcium ; diffusion ; metastable defect ; oxide ion ; perovskite ; sputtering ; thin film ; titanate
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract Metastable defects of oxygen in calcium titanate thin films with perovskite structure were studied. Thin films of calcium titanate were deposited by a magnetron sputtering method. The oxygen defects were evaluated, using the results of oxygen diffusion experiments. The thin film process had tendencies of creation of a large amount of oxygen point defects and the wide range of non equilibrium solid solution at room temperature. Thecrystal distortion was increasing with deviation from the stoichiometric composition. Although the metastable defects were decreasing due to the annealing, annealed samples had more oxygen defects in a few magnitude orders than single crystals.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 30 (1995), S. 4645-4650 
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Barium titanate (BaTiO3) thin films prepared on magnesia, silicon and strontium titanate substrates by r.f. sputtering has been investigated. As a function of substrate and annealing temperatures, the crystal structure and shape were examined by X-ray diffraction and scanning electron microscopy. Thin films were grown on both MgO and silicon substrates; they were amorphous when deposited on MgO if the substrate temperature was less than 450 °C, while for those grown on silicon the temperature had to be less than 500 °C. Above these elevated temperatures, the films were crystalline, with cubic symmetry. After annealing the thin films on magnesia, the crystal structure changed from cubic to tetragonal phase above 1100 °C; thebe c-axis or annealing thus caused the grain growth of the BaTiO3. The thin films on SrTiO3 were found toc-axis oriented tetragonal films for a substrate temperature above 500 °C.
    Type of Medium: Electronic Resource
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