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  • 1
    Electronic Resource
    Electronic Resource
    Improved pseudomorphic high electron mobility transistor structures on InGaAs substrates (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 968-973 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single and double pulse doped pseudomorphic high electron mobility transistor structures with 110-Å-thick InGaAs channel layers have been grown on InxGa1−xAs substrates (x=0.04; 0.065) and GaAs substrates. For In0.23Ga0.77As channel layers, higher electron mobilities were obtained on In0.04Ga0.96As substrates due to reduced strain. Transmission electron microscopy micrographs on a GaAs-based sample exhibited a roughened selectively doped heterojunction but no detected misfit dislocations. Pseudomorphic structures with In0.27Ga0.73As channel layers were also grown on In0.065Ga0.935As substrates with good transport and optical properties. The properties of the analogous structure grown on GaAs were severely degraded. Transmission electron microscopy micrographs on the GaAs sample showed a very rough selectively doped heterojunction with misfit dislocations. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364134
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  • 2
    Electronic Resource
    Electronic Resource
    Carbon doping and lattice contraction of GaAs films grown by conventional molecular beam epitaxy (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 511-513 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon-doped GaAs films have been grown by solid-source molecular beam epitaxy using a graphite filament. The films were doped from 1×1015 cm−3 to 5×1019 cm−3 and the resulting mobilities are equivalent to beryllium-doped films. A slight dependence of As4/Ga flux ratio on carbon doping was observed. The use of either As2 or As4 did not significantly affect the carbon doping concentrations. Lattice contractions were observed for films doped heavily with carbon or beryllium. For a given doping concentration the contraction is more significant for carbon doping which is consistent with the smaller tetrahedral covalent radius of carbon compared to beryllium. Good agreement between observed and calculated lattice contractions with carbon doping is obtained. Annealing studies on a film doped with carbon at 5×1019 cm−3 indicate that the electrical properties and lattice contraction are quite stable.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347695
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  • 3
    Electronic Resource
    Electronic Resource
    Metalorganic growth of HgTe and CdTe at low temperatures using diallyltelluride (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4929-4931 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Both HgTe and CdTe films have been grown by metalorganic chemical vapor deposition using a novel tellurium source, diallyltelluride. This compound is found to be less stable than previously examined organotellurium compounds and permits film growth at lower substrate temperatures. This reduced stability is consistent with the presence of double bonds in diallyltelluride compared to single bonds present in alkyl tellurides. Specular HgTe films have been grown at temperatures as low as 180 °C and x-ray analysis indicates that this material is of good crystalline quality.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339005
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  • 4
    Electronic Resource
    Electronic Resource
    Growth of pseudomorphic high electron mobility heterostructures by atmospheric pressure metalorganic chemical vapor deposition (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 274-276 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pseudomorphic high electron mobility heterostructures are demonstrated by atmospheric pressure metalorganic chemical vapor deposition for the first time. Transmission electron microscopy (TEM), variable temperature Hall effect measurements, Shubnikov–de Haas measurements, and photoreflectance were applied to characterize the heterostructures. TEM micrographs of the cross section reveal sharp heterojunction interfaces. Variable temperature Hall effect measurements show a monotonic increase in mobility as the temperature is lowered. With a spacer thickness of 120 A(ring), a peak mobility of 80 000 cm2/V s at 20 K and a sheet carrier concentration of 1.05×1012 cm−2 are obtained. Similarly, a thinner spacer (60 A(ring)) shows a peak mobility of 57 000 cm2/V s at 25 K with a sheet carrier concentration of 1.40×1012 cm−2. Shubnikov–de Haas measurements in magnetic fields up to 18.5 T show clear oscillations and the quantum Hall effect confirming the existence of a two-dimensional electron gas.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102806
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  • 5
    Electronic Resource
    Electronic Resource
    AlGaAs/InGaAs/AlGaAs double pulse doped pseudomorphic high electron mobility transistor structures on InGaAs substrates (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 3576-3580 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Double pulse doped AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (PHEMT) structures have been grown on InxGa1−xAs (x=0.025–0.07) substrates using molecular beam epitaxy. A strain compensated, AlGaInAs/GaAs superlattice was used for improved resistivity and breakdown. Excellent electrical and optical properties were obtained for 110-Å-thick InGaAs channel layers with indium concentrations up to 31%. A room temperature mobility of 6860 cm2/V s with 77 K sheet density of 4.0×1012 cm−2 was achieved. The InGaAs channel photoluminescence intensity was equivalent to an analogous structure on a GaAs substrate. To reduce strain PHEMT structures with a composite InGaP/AlGaAs Schottky layer were also grown. The structures also exhibited excellent electrical and optical properties. Transmission electron micrographs showed planar channel interfaces for highly strained In0.30Ga0.70As channel layers. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365676
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  • 6
    Electronic Resource
    Electronic Resource
    Simultaneous determination of Poisson ratio, bulk lattice constant, and composition of ternary compounds: In0.3Ga0.7As, In0.3Al0.7As, In0.7Ga0.3P, and In0.7Al0.3P (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 4160-4162 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A technique using the common (004) x-ray diffraction spectrum is demonstrated for the simultaneous determination of Poisson ratio, bulk lattice constant, and alloy composition for ternary compounds with lattice constants near the midpoint between GaAs and InP. Thin, strained layers of InGaAs, InAlAs, InGaP, and InAlP were grown. By careful choice of ternary composition and thickness, the same composition was grown on both GaAs and InP substrates without measurable relaxation in the (004) x-ray spectrum. The diffraction equation was simultaneously solved for the Poisson ratio and bulk lattice constant of the ternary compound. Subsequently the ternary composition was determined by applying Vegard's law. The resulting Poisson ratios agreed well with the compositional averages of the binary endpoints. By extrapolating the results for InAlAs, a Poisson ratio of 0.33 was determined for AlAs. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1425954
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  • 7
    Electronic Resource
    Electronic Resource
    Carbon tetrabromide carbon doping of molecular beam epitaxial (GaAs) films (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 202-204 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs films were doped with carbon up to a hole concentration of 1.3×1020 cm−3 using CBr4 vapor. The material quality of the heavily doped films was found to be better than that obtained using evaporated carbon. Improvements at the highest doping levels include better surface morphology, higher hole mobilities, significantly stronger photoluminescence, and near unity substitutional incorporation. Doping pulses created using CBr4 exhibited abrupt transitions. From the results it is suggested that the material quality of the films doped with evaporated carbon are degraded at high doping levels due to surface combination of reactive carbon species.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111504
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