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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4852-4858 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Picosecond interferometry is used to study the acoustics waves created by heating Pt films with a subpicosecond laser pulse. Both the period of the initial oscillations in the metal film and the amplitude of the sound wave in the substrate are measured quantitatively. The platinum films are roughened by irradiation with energetic ions. The amplitude of the sound wave is doubled at those irradiation levels where the platinum coverage has been reduced by about one-half. A theory for the amplitude of the launched acoustic wave predicts that the acoustic amplitude is proportional to the mean square film thickness. Thus changes in the morphology of a partially perforated metal film can be observed using a simple, nondestructive optical technique. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7777-7783 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dewetting and nanopattern formation of 3–10 nm Pt thin films upon ion irradiation is studied using scanning electron microscopy (SEM). Lateral feature size and the fraction of exposed surface area are extracted from SEM images and analyzed as functions of ion dose. The dewetting phenomenon has little temperature dependence for 3 nm Pt films irradiated by 800 keV Kr+ at temperatures ranging from 80 to 823 K. At 893 K, the films dewet without irradiation, and no pattern formation is observed even after irradiation. The thickness of the Pt films, in the range 3–10 nm, influences the pattern formation, with the lateral feature size increasing approximately linearly with film thickness. The effect of different ion species and energies on the dewetting process is also investigated using 800 keV Kr+ and Ar+ irradiation and 19.5 keV He+, Ar+, Kr+, and Xe+ irradiation. The lateral feature size and exposed surface fraction scale with energy deposition density (J/cm2) for all conditions except 19.5 keV Xe+ irradiation. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 49-54 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single impacts of energetic C60 clusters on (2×1)-(100) silicon substrates are studied by molecular-dynamics simulations. The role of impact energies and internal cluster energy are investigated in detail. Six different energy regimes can be identified at the end of the ballistic phase: At thermal energies below 20 eV the fullerene cages undergo elastic deformation, while impinging on the surface, and are mostly chemisorpted on top of the (2×1)-dimer rows. Between 20 and 100 eV the cage structure is preserved after the collision, but the cluster comes to rest within a few monolayers of the silicon surface. At energies of 100–500 eV the cluster partially decomposes and small coherent carbon caps are embedded in the surface. At higher energies up to 1.5 keV complete decomposition of the fullerene cluster occurs and an amorphous zone is formed in the subsurface area. At energies greater than approximately 1.5 keV craters form and above 6 keV sputtering becomes significant. In all cases the substrate temperature is of minor influence on the final result, but the projectile temperature is important for impacts at lower energies (〈1.5 keV). For high energy impacts the ballistics resemble that of single atom impacts. Nearly 1:1 stoichiometry is obtained for impact energies around 1 keV. These results reveal an interesting possibility for controlled implantation of C in Si at high local concentrations, which might allow the formation of silicon carbide. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3215-3217 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Atomic force microscopy is used to characterize the evolution of film morphology produced by heavy-ion bombardment. Pt films, 3 and 5 nm thick, are deposited on SiO2 substrates and subsequently bombarded by 800 keV Kr+. Ion doses of 〉2×1014 initiate pattern formation and the dewetting of Pt films from the substrate. The film morphology becomes increasingly disconnected with increasing dose; at the highest doses, (∼2×1016 cm−2), isolated nanoparticles are formed with a uniform spacing. The results are explained by the nucleation of bare substrate patches and subsequent coarsening of the morphology by the molten zones created by individual Kr+ impacts. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1572-901X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract The novel trinuclear CuI complex [Cu3(dppm)3(NO3)(OH)](NO3) obtained by reacting dppm with Cu(NO3)2 · 3H2O in the presence of NaBPh4 was characterized by a single-crystal X-ray analysis as well as by physico-chemical and spectroscopic methods. The [Cu3(dppm)3(NO3)(OH)]+ cation consists of a triangular array of copper atoms, (with dppm ligands bridging each edge of the triangle), a triply bridging OH group and NO− 3 anion bound to two faces of the Cu3 unit, respectively.
    Type of Medium: Electronic Resource
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