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  • 1
    Electronic Resource
    Electronic Resource
    Large low-field magnetoresistance in strained ultrathin Pr0.67Sr0.33MnO3 films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6749-6751 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strain effect on the low-field magnetoresistance (LFMR) in epitaxially grown Pr0.67Sr0.33MnO3 thin films has been studied. Very large LFMR and MR hysteresis have been found in compressive-strain ultrathin films grown on LaAlO3 (001) substrates when a magnetic field is applied perpendicular to the film plane. The LFMR ratio as high as 360% at H=1600 Oe and T=30 K was obtained from the MR hysteresis curve. The large LFMR depends strongly on the applied magnetic field direction as well as the film thickness. It is reduced to less than 10% when the film thickness is about 20 nm. In comparison, tensile-strain films on SrTiO3(001) show positive LFMR, and almost strain free films on NdGaO3 (110) show very small LFMR (〈2%), at comparable magnetic fields and temperatures. These effects were found to be closely related to the strain-induced magnetic anisotropy. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372829
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  • 2
    Electronic Resource
    Electronic Resource
    Domain wall resistance in ultrathin manganite films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6952-6954 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Resistance related to magnetic domain walls in compressive-strained epitaxial manganite ultrathin films has been studied. The samples were demagnetized in different ways to induce either multidomain or single domain states. Very large difference in resistance was observed between the two states, which was attributed to the domain wall resistance. The magnitude of the domain wall resistance was found to be different in different manganite compounds. We have shown that large domain wall resistance can be obtained in strained ultrathin manganite films and the result cannot be simply explained by the existing models. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1362645
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  • 3
    Electronic Resource
    Electronic Resource
    Role of strain in magnetotransport properties of Pr0.67Sr0.33MnO3 thin films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 7409-7414 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the strain effects on the structural and magnetotransport properties of Pr0.67Sr0.33MnO3 (PSMO) thin films. The PSMO films were epitaxially grown on LaAlO3 (001), SrTiO3 (001), and NdGaO3 (110) substrates that induce biaxial compressive, tensile, and almost no strain in the films, respectively. The film thickness t, varied between 4–400 nm, was used as another controlling parameter of strain for each type of film. There exist two distinct thickness ranges with different thickness dependence of the magnetotransport properties. For t〈20 nm, the zero-field resistance peak temperature (Tp) and the high-field magnetoresistance (HFMR) properties are critically dependent on the thickness and the substrate. For t〉20 nm, the Tp and the HFMR ratio show weak t dependence. The results show evidence for the effects of the Jahn–Teller type distortion as well as disorders on the resistive transition temperature and the HFMR. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373002
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  • 4
    Electronic Resource
    Electronic Resource
    Reassignment of the valence photoelectron spectra of nickel diallyl complex Ni(.eta.3-C3H5)2 using variable energy photoelectron spectroscopy (1992)
    s.l. : American Chemical Society
    Inorganic chemistry 31 (1992), S. 5162-5163 
    Details
    ISSN: 1520-510X
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ic00051a004
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  • 5
    Electronic Resource
    Electronic Resource
    Saturated electric field effect at semi-insulating GaAs-metal junctions studied with a low energy positron beam (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 3891-3899 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interfacial electric field established under different reverse bias conditions in Au and Ni on semi-insulating GaAs junctions has been studied by means of a low energy positron beam. The technique used is that of monitoring the positron drift to the interface through changes in the annihilation radiation lineshape as a function of incident positron beam energy at different reverse biases. The data show a small but clear electric field drift of positrons towards the interface that increases more rapidly at low voltages (less than 50 V) which at higher biases tends towards saturation. This confirmation of electric field saturation adds further weight to the picture of an electric field enhanced electron capture cross section for the ionized EL2 defect. Electric field values extracted from the data are compared with results from other techniques and suggest that enhanced electron capture is already occurring at the relatively low built-in fields (∼1 kV cm−1) found at the unbiased junction, with a rapid increase of EL2+ neutralization occurring for biases above 10 V. At still higher fields ∼10 kV cm−1 (biases〉50 V), there appears to be an additional threshold for more complete EL2+ neutralization adjacent to the contact. The present study clearly demonstrates the often overlooked necessity of catering for built-in electric fields in positron diffusivity studies of III–V semiconductors where surface midgap Fermi-level pinning is common. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365693
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  • 6
    Electronic Resource
    Electronic Resource
    Anomalous anisotropic magnetoresistance in Pr0.67Sr0.33MnO3 thin films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5573-5575 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Anisotropic magnetoresistance (AMR) in strained Pr0.67Sr0.33MnO3 thin films has been studied by measuring the resistance as a function of the angle between the applied magnetic field direction and the film normal with the current always perpendicular to the magnetic field. The results show that both compressive- and tensile-strained ultrathin films (50–150 Å) exhibit unusually large AMR, but with opposite signs. In contrast, the almost strain free films show much smaller AMR over all the temperature and field ranges studied. The AMR decreases rapidly as the film thickness increases due to the gradual release of strain. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373408
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  • 7
    Electronic Resource
    Electronic Resource
    Variable Energy Photoelectron Spectroscopy of M(.eta.3-C3H5)2 (M = Ni, Pd, and Pt): Molecular Orbital Assignments (1994)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 116 (1994), S. 9543-9554 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja00100a019
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  • 8
    Electronic Resource
    Electronic Resource
    Superconducting properties of nanocrystalline MgB2 thin films made by an in situ annealing process (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1840-1842 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the structural and superconducting properties of MgB2 thin films made by pulsed-laser deposition followed by in situ annealing. The cross-sectional transmission electron microscopy reveals a nanocrystalline mixture of textured MgO and MgB2 with very small grain sizes. A zero-resistance transition temperature (Tc0) of 34 K and a zero-field critical current density (Jc) of 1.3×106 A/cm2 were obtained. The irreversibility field was ∼8 T at low temperatures, although severe pinning instability was observed. The result is a step towards making the in situ deposition process a viable technique for MgB2 Josephson junction technologies. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1405431
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  • 9
    Electronic Resource
    Electronic Resource
    Soft x-ray excited optical luminescence: Some recent applications : Papers from the 12th National Synchrotron Radiation Instrumentation Conference (2002)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 73 (2002), S. 1379-1381 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: X-ray excited optical luminescence (XEOL) studies of several classes of light emitting materials excited using soft x rays (photon energy ranging from 10 to 2500 eV) are presented. We show that XEOL with soft x rays (short penetration depths) is often site specific and is ideally suited for the study of light emitting thin films and devices. Several examples including porous silicon, organic light emitting diode materials, and CdS based nanostructures are used to illustrate the unique properties of XEOL and its applications in the soft x-ray energy region. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1436540
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  • 10
    Electronic Resource
    Electronic Resource
    XAFS studies of Al/TiNx films on Si(100) at the Al K- and L3,2-edge (1999)
    Chester : International Union of Crystallography (IUCr)
    Journal of synchrotron radiation 6 (1999), S. 524-525 
    Details
    ISSN: 1600-5775
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0909049599001247
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