ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
In this letter, we present a new approach for synthesizing Ge quantum crystallites embedded in a-SiNx films. On the basis of preferential chemical bonding formation of Si-N and Ge-Ge, thin films with Ge clusters embedded in a-SiNx matrix have been prepared by the plasma enhanced chemical vapor deposition method with reactant gases of SiH4, GeH4 and NH3 mixed in hydrogen plasma at substrate temperature of 250 °C. Then the as-deposited films were annealed at 800 °C for 30 min in the vacuum for the crystallization of Ge clusters and the growth of nanometer-sized Ge quantum crystallites. These samples were characterized by infrared absorption spectra, transmission electron microscopy, x-ray diffraction, and Raman scattering spectra. The average size of Ge crystallites was found to be about 200 A(ring). By choosing conditions of the deposition and thermal-annealing treatment, the size of Ge quantum crystallites can be prepared in a controlled manner.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.111821
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