Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Structure of interfaces in a-SiB: H/a-SiNx@B: H superlattices (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 778-785 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present experimental results on the atomic structure of the interfaces between a-Si:H and a-SiNx:H layers obtained by analyzing the intensity of the Raman lines from zone-folded acoustic phonons and of the peaks of x-ray diffraction at grazing angles. We determine the width of these interfaces and their stability under thermal annealing in temperatures below the crystallization temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347364
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Growth of diamond on silicon during the bias pretreatment in chemical vapor deposition of polycrystalline diamond films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 768-775 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The processes that occur on the silicon substrate during the bias pretreatment in a microwave plasma chemical vapor deposition system for the growth of diamond are investigated using a variety of techniques. The direct current during the bias pretreatment is correlated with changes in the shape of the plasma and with the amount and chemical and crystalline nature of the deposit on the substrate as well as with the nucleation density for subsequent diamond growth. The spatio-temporal nature of the nucleation process explains the evolution of the bias current. It is shown that the bias pretreatment alone already yields a closed layer of nanocrystalline diamond and a strong etching of the silicon substrate. An analysis of the nucleation conditions necessary for the formation of oriented and textured diamond crystallites leads to a choice of parameters during bias pretreatment that yield homogeneous layers of highly oriented and textured diamond crystals over an area of 100 mm2. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360823
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Influence of light on individual defect noise in a-Si:H/a-SiNx:H double barrier structures (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2690-2694 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A report on the influence of light on random telegraphic noise (RTN) in the current through a-Si:H/a-SiNx:H double barrier structures is given. Upon illumination with a focused He-Ne laser the spectral power density of the noise as well as the individual switching times are affected. Different regimes are observed: For sufficiently low light intensity the emission time constant τ¯e of the trap responsible for RTN decreases for increasing light intensity, whereas the capture time constant τ¯c remains nearly unaffected. For medium intensity illumination RTN disappears during illumination but recovers after its termination. Under high intensity illumination RTN vanishes and as a result the spectral power density of the unilluminated sample changes from a Lorentzian (typical for RTN) to a 1/f-like behavior. This unilluminated non-RTN state is metastable, i.e., the RTN state can be recovered by moderate thermal annealing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356222
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Magnetoresistance of multiple electron gas wires at the AlGaAs/GaAs heterointerface (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 110-112 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A parallel arrangement of thin wires has been fabricated in the AlxGa1−xAs/GaAs heterostructure with holographic lithography. The observed anisotropy of the conductivity parallel versus perpendicular to the wires proves the existence of isolated conduction paths. Transverse magnetoresistance is negative at 4 K and exhibits a shoulder at a magnetic field, where the diameter of the cyclotron orbit amounts to 90 nm, which is supposed to be the effective wire width.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100384
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Characterization of superlattices based on amorphous silicon (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 556-560 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have characterized the structure of superlattices (SL's) based on amorphous silicon by optical interference microscopy and secondary electron micrographs. Differences in the etch rate of a-Si:H and a-SiNx:H in CP6 create a series of terraces and steps in a-Si:H/a-SiNx:H superlattices that show up clearly in interference contrast micrographs and allow an assessment of the quality of the SL. Secondary electron microscopy images of doping superlattices (npnp or nini) of a-Si:H reveal after plasma etching the layered nature of the samples. The necessary contrast is provided by differences in the etch rate of the two interfaces (i.e., n→p vs p→n). Evidence for structural differences of the interfaces of nini multilayers stems from secondary ion mass spectrometry and 15N depth profiles of hydrogen that show an extra amount of H of the order of 1015 cm−2 only at that interface where intrinsic a-Si:H is growing on top of the n-type material. We explain these results in terms of a growth model which entails a hydrogen enrichment over its bulk concentration that is not limited to the surface but extends into a subsurface region during the film deposition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338258
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Moving grating technique: A new method for the determination of electron and hole mobilities and their lifetime (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3066-3068 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new technique to determine the mobilities and lifetime of photogenerated electrons and holes in semiconductors relies on the short circuit current that is induced perpendicularly to a moving interference grating. Theoretical expressions for the short circuit current are derived that relate the carrier mobilities and their lifetime to the velocity and spatial period of the grating. The technique has been implemented and was successfully applied to a-Si:H.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110260
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Nanometer-scale modification of the tribological properties of Si(100) by scanning force microscope (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2499-2501 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogen-terminated Si(100) surfaces were patterned on the nanometer scale using a conducting-probe scanning force microscope (SFM) operating in air ambient. To generate the nanostructures, negative voltages were applied to the conductive SFM tip with respect to the sample while scanning in contact mode. After structuring, the same SFM tip was used to measure simultaneously the sample topography and the friction force between tip and sample. An increase in height by about three nanometers resulting from field-enhanced oxidation is observed in areas where the tip had been negatively biased with constant voltages above 7 V. The topographical change is accompanied by a relative increase of the friction force of about 20% over the structured areas. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113146
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Bipolar treatment of the electrically detected photocarrier grating method (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2518-2520 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrically detected transient grating technique was introduced recently to determine ambipolar diffusion constant Damb and lifetime τR of photocarriers in semiconductors. These material parameters are extracted from the transient current perpendicular to an intensity grating formed by coherent laser beams after that grating is switched on and off. We describe the bipolar treatment to calculate the time-dependent photocurrent by solving the rate equations for electrons and holes with Poisson's equation. The shape of the transient signal depends critically on the dielectric-relaxation time (τdiel) in addition to Damb and τR. A satisfying fit of experimental data for amorphous hydrogenated silicon is obtained when τdiel is adjusted appropriately. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114444
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Nanometer-scale field-induced oxidation of Si(111):H by a conducting-probe scanning force microscope: Doping dependence and kinetics (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3144-3146 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogen-terminated Si(111) was patterned on the nanometer scale by field-induced oxidation using a biased conducting-probe scanning force microscope. The kinetics of oxide growth as well as its dependence on doping are investigated. Field-induced oxidation is observed for voltages exceeding a doping dependent threshold above which oxidation kinetics follows a power law. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114861
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Influence of space charges on the resonant photoconductor employing a moving laser induced grating (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1746-1748 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We discuss the performance of a recently proposed semiconductor device that converts the optical signal of frequency modulated laser beams into electrical signals of the same frequency in the GHz range. The device relies on a synchronous drift of photogenerated electrons with a moving intensity grating obtained from the interference of frequency shifted coherent lasers. The linearized rate equations for electrons and holes are solved in the limit of weak contrast of the intensity grating taking both drift and diffusion terms into account. One drift term due to the externally applied electric field is responsible for a resonantly enhanced amplitude of the photoelectron grating. A second drift term is related to internal fields set up by internal space charges and effectively reduces the electron grating amplitude in the lifetime regime. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117472
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...