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  • 1
    Electronic Resource
    Electronic Resource
    Anomalous low-voltage tunneling current characteristics of ultrathin gate oxide (∼2 nm) after high-field stress (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5497-5501 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of oxide barrier shape change caused by stress-induced interface trap charges on the low-voltage tunneling current (LVTC) characteristics of ultrathin gate oxide (∼2 nm) is studied in this work. It was found that for an ultrathin gate oxide working in the direct tunneling regime, the LVTC behavior is strongly dependent on the barrier shape of the oxide. After high-field stress, anomalous LVTC phenomenon is observed. There is an invariant point existing in current–voltage curves. For a bias smaller than the value of the invariant point, the gate current decreases with stress time. However, for a bias larger than that, the gate current increases with stress time and then saturates. This phenomenon cannot be explained by conventional trap-assisted tunneling conduction, but by the change of tunneling probability due to barrier shape variation. An interface trap charge model is proposed to explain the observed invariant point mentioned above. From this, one can find the voltage corresponding to the midgap bias and, therefore, the initial effective oxide charge number density. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1364654
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  • 2
    Electronic Resource
    Electronic Resource
    Clockwise C-V hysteresis phenomena of metal–tantalum-oxide–silicon-oxide–silicon ( p) capacitors due to leakage current through tantalum oxide (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4277-4283 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermal tantalum oxide with a thickness of 620 A(ring) was studied. The dc leakage resistance and high-frequency (1-MHz) resistance of a metal–tantalum-oxide–silicon capacitor were found to be on the order of 108 and 1 Ω cm2, respectively. The C-V behavior of the capacitor, with its initial states being carefully treated, was reproduced and observed to be dependent on the return voltage and hold time (at return point) of the measurement conditions. And only negative charges were observed to be responsible for the conduction current through tantalum oxide. A model with the considerations of the ac equivalent circuit and low-frequency leakage characteristic of tantalum oxide was proposed for these observations. Theoretical examples, with their parameters being suitably given according to the measured data, were shown, and they explained the experimental observations quite well. It is found that the measurement conditions and effect of the ac resistance of tantalum oxide on the determination of flat-band capacitance are important and should be carefully considered when one is interpreting the interface charges from C-V curves.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339102
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  • 3
    Electronic Resource
    Electronic Resource
    Enhanced thermally induced stress effect on an ultrathin gate oxide (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5423-5428 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of thermal stress on the electrical characteristics of metal–oxide–semiconductor diodes with oxides in an ultrathin regime were studied. By centering a quartz ring as a heat sink beneath the silicon wafer, the introduced temperature gradient results in a corresponding hat-like shape thickness distribution for an oxide grown on the wafer with a rapid thermal processing system. The enhanced exterior tensile and compressive thermal stresses due to introduced temperature gradient make the oxides exhibit less and more substrate injection saturation current Jsat, respectively, in comparison to control oxides. Their flatband voltage VFB data also clearly show the dependency of effective charge number density Neff on exterior thermal stress. A stress distribution model is proposed to explain the observation. Co-60 irradiation was also performed on the stressed samples to observe this stress extent by examining the variation of electrical characteristics. It was found that an oxide grown on a wafer in exterior compression exhibited better radiation hardness than one in tension. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1452763
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  • 4
    Electronic Resource
    Electronic Resource
    Stress effect on the kinetics of silicon thermal oxidation (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3027-3032 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oxidation of silicon wafers under external mechanical stress was studied in this work. From the oxide thickness profile measured by an automatic-scanning ellipsometer, it was found that the oxidation kinetics of silicon were significantly affected by mechanical stress. There are two distinct features of oxide thickness distribution corresponding to short and long times. By comparing the kinetic constants taken from experiments and the simulated stress distribution on the silicon wafer, we can possibly explain the two features of oxide thickness distribution: the initial rate constant is deformation dependent and the parabolic rate constant is stress dependent. The observed stress-dependent oxidation rates are important in the study of thin gate oxide reliability. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1342801
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  • 5
    Electronic Resource
    Electronic Resource
    Degradation in metal-oxide-semiconductor structure with ultrathin gate oxide due to external compressive stress (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3797-3799 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of external stress on metal-oxide-semiconductor (MOS) structure with ultrathin gate oxide (∼1.5 nm) was studied. J–V characteristics of fresh and stressed samples revealed that the tensile stress had little effect on J–V curves, whereas the compressive stress obviously increased the leakage current by about several hundred in percentages with respect to the fresh sample, in both positive and negative gate biases. This increase in leakage current was suggested to be attributed to the increase of interface states and silicon bulk traps under external compressive stress in the MOS device with an inherent tensile stressed silicon. In addition, we also found that once the device was damaged by the previously applied compressive stress, the second applied compressive stress of the same magnitude would not create more damage unless the device was breakdown. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1420491
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  • 6
    Electronic Resource
    Electronic Resource
    Enhanced nitrogen incorporation and improved breakdown endurance in nitrided gate oxides prepared by anodic oxidation followed by rapid thermal nitridation in N2O (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3875-3877 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room-temperature anodic oxidation (ANO) followed by rapid thermal nitridation in N2O was used as new method to prepare thin nitrided oxides. It was found that the ANO nitrided oxides demonstrate better interfacial property and breakdown endurance than rapid thermal oxidation (RTO) nitrided oxides. The concentration of nitrogen incorporated in ANO nitrided oxide is larger than that in RTO nitrided oxides. It is believed that the loose density and the existence of hydrogen related species in anodic oxides formed by room-temperature anodization cause nitrogen to diffuse easier into oxide and pile up at Si/SiO2 interface during N2O nitridation. In addition, the self-readjustment of anodization current through the weak path in oxide is beneficial to thin gate oxides. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117134
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  • 7
    Electronic Resource
    Electronic Resource
    Enhancement of silicon oxidation rate due to tensile mechanical stress (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1834-1835 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oxidation of silicon wafers under external mechanical stress was studied in this work. From the oxide thickness profile measured by an automatic ellipsometer, it was found that the oxidation kinetics of silicon was affected by the mechanical stress. The tensile stress strongly enhances the oxidation rate of silicon. A concept was proposed to explain this phenomenon by using a well-known physical Si–SiO2 lattice model. The tensile stress in the silicon will enlarge the atom spacing of silicon and make the oxidation to be easier and faster. A simulated deformation of silicon substrate under tensile stress was also given to support this concept. This work is a direct evidence of the effect of mechanical stress on silicon oxidation. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126181
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  • 8
    Electronic Resource
    Electronic Resource
    Role of stress in irradiation-then-anneal technique used for improving radiation hardness of metal-insulator-semiconductor devices (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 675-677 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The improvement efficiencies of the newly reported irradiation-then-anneal (ITA) treatments applied to improve the radiation hardness of metal-insulator-semiconductor (MIS) devices with various interfacial stresses were studied. Each ITA treatment includes an irradiation of Co-60 with a total dose of 106 rads (SiO2) and an anneal in N2 at 400 °C for 10 min, successively. It is found that the efficiency of improvement strongly depends on the number of ITA treatments and especially on the interfacial stress of device. These dependencies should be explained by the possible release of SiO2/Si interfacial stress by ITA treatments.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107819
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  • 9
    Electronic Resource
    Electronic Resource
    Improvement in radiation hardness of gate oxides in metal–oxide semiconductor devices by repeated rapid thermal oxidations in N2O (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3136-3138 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Instead of using the conventional one-time N2O oxidation of silicon, repeated N2O rapid thermal oxidations (RNRTO) is proposed as a new gate oxide preparation method. The radiation hardness of metal–oxide semiconductor (MOS) capacitors with RNRTO oxide is found to be better than that with the conventional one-time N2O-grown oxide. The nitrogen content at the SiO2/Si interface as determined by secondary ion mass spectroscopy (SIMS) is constant for all the RNRTO samples but the thickness of the nitrogen-rich interfacial layer increases as the number of RNRTO increases. The less strain gradient caused by this increasing nitrogen-rich interfacial layer thickness is the main cause of improving the radiation hardness of the MOS capacitors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111343
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  • 10
    Electronic Resource
    Electronic Resource
    Preparation of fluorinated gate oxides by liquid phase deposition following rapid thermal oxidation (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3322-3324 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The fluorinated gate oxides grown by the method of liquid phase deposition (LPD) following rapid thermal oxidation (RTO) were studied in this work. Samples with and without aluminum are both investigated in the LPD process. It was found that the amount of F atoms decreases as the LPD oxide was treated subsequently by RTO treatment. For a given time of RTO, the longer the LPD time, the larger the amount of F contained in the gate oxides. But for a given time of LPD, the longer the RTO time, the smaller the amount of F contained in the gate oxides. It was found that the radiation induced oxide charge number density shift ΔNot and the midgap interface trap density shift ΔDitm, and the oxide breakdown field Eox exhibit turnaround dependencies on the LPD growth time. In other words, they are dependent on the amount of F atoms incorporated into the gate oxide. Interestingly, it was found that for the gate oxides grown by the LPD process containing Al have better quality than the LPD without containing Al from the viewpoint of radiation hardness and electric breakdown field. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113744
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