ISSN:
1432-0630
Keywords:
68.55.Bd
;
61.16.Di
;
61.10.Lx
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract We present a novel approach to the molecular beam epitaxy of [111]-oriented GaAs. Surface-segregating In employed as an isoelectronic surfactant allows us to achieve mirror-like (111) GaAs surfaces within a wide range of growth conditions. Scanning electron and atomic force microscopy confirm the excellent morphology of the resulting samples. High-resolution X-ray diffraction shows the incorporation of In into the films to be negligible. Finally, we demonstrate a 10 Å-In0.2Ga0.8As/300 Å-GaAs superlattice based on surfactant-grown GaAs with a photoluminescence linewidth as narrow as 4.2 meV.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00324362
Permalink