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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4176-4180 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lattice damages induced by BF+2 ion implantation in single-crystalline silicon have been analyzed using secondary-ion mass spectrometry, ion channeling technique in Rutherford backscattering spectroscopy, and transmission electron microscopy. Concentration depth profiles of boron and fluorine showed the same values of projection range 400 A(ring) at all doses for 50-keV energy. A considerable amount of damage was formed in the silicon lattice and the surface region of the substrate was amorphized when the dosage exceeded a critical value, which was determined to be 8.0 × 1014/cm2 experimental dose. The amorphized layer showed a clear boundary to the crystalline silicon, which contains severely damaged regions identified to be microamorphous clusters. He2+ ion channeling data revealed that the integrated damage in implanted layers increases linearly with dosage up to the critical dose and increases with a much smaller rate with further increase in the dosage. It is suggested that the integrated damage shows a smaller damage rate once the surface was amorphized because there can be no further increase of lattice damage in the amorphous layer. The calculated values of the integrated damage based on a model for damage formation agree well with the measured ones.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1742-1749 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effects of phosphorus doping level in the polycrystalline silicon (polysilicon) layer of unannealed as well as annealed WSi2.6−polysilicon composite films on the growth kinetics of the tungsten silicide have been investigated by analyses of growth rate of the thermal oxide, depth profiles, and microstructures of the polycide cross section. The behaviors of excess silicon in the tungsten silicide layer during annealing and oxidation as well as the oxidation mechanisms of the silicon-rich tungsten silicide have also been studied. For the unannealed tungsten polycides, the activation energy of the linear rate constant decreases with an increase in the phosphorus doping level while the parabolic rate constant is independent of the phosphorus concentration. For annealed tungsten polycides, however, both rate constants are doping level independent. Analysis of the microstructures of the cross section taken by scanning electron microscope clearly indicates that the excess silicon in the silicide layer is consumed first and then the silicon from the underlying polysilicon is consumed during oxidation.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 5014-5016 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of annealing with and without a magnetic field on the coercive force and loss of cobalt-free amorphous Fe-B-Si wound cores have been investigated as a function of the annealing temperature and field to improve the properties of the ribbon cores. As-wound cores have square B-H loops with high coercive force and low remnant magnetization due to the presence of magnetically hard regions in the ribbons. The remnant magnetization increases, and the coercive force and loss of wound cores become a minimum when they are annealed without a field at 410 °C due to the removal of stresses and the occurrence of crystallization at higher annealing temperature. Near 180° domains exist in the thermally annealed toroid cores, but the domain walls are not parallel to the longitudinal direction of the ribbon. In the specimen annealed with 10 Oe at 390 °C, the domains are parallel to the longitudinal direction due to the field-induced uniaxial anisotropy. These result in a further increase in the remnant magnetization and a decrease in the coercive force and loss. Total core loss, measured at 1.2 T and 60 Hz, of the wound core annealed at 390 °C with field of 10 Oe was 0.15 W/kg.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 5 (1994), S. 17-21 
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Polycrystalline CdS/CdTe solar cells have been prepared by coating and sintering a CdS slurry and a (Cd+Te) slurry. CdS layers were first formed on borosilicate glass substrates at 600°C in nitrogen and then CdTe layers were formed on the sintered CdS layers at 625°C in nitrogen. The (Cd+Te) slurry contained (Cd+Te) powders mixed in a ball mill for 12–220 h instead of more expensive CdTe powders. The shape of cadmium particles changed from spherical to plate-like and the diameter of the plate-shaped particles became smaller as the ball-milling time increased. In addition, a compound CdTe started to form during a long milling time. The sintered CdTe layers were more compact as the diameter of plate-shaped cadmium particles decreased. However, cracks developed in the sintered CdTe layer when the diameter was small (∼ 2 μm). The efficiency of sintered CdS/CdTe solar cells increased with decreasing particle diameter and then decreased with further decrease in particle diameter. The highest efficiency of 12.1% was achieved using a mixture of (Cd+Te) powders which had plate-shaped cadmium particles with a diameter of 5 μm. The results suggest that high-efficiency sintered CdS/CdTe solar cells can be fabricated by using CdTe slurry from the mixture of (Cd+Te) powders with an inexpensive ball-milling process.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 4 (1993), S. 178-182 
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract 1 Μm CdS films for the window layer of CdS/CulnSe2 solar cells have been prepared by vacuum evaporation at various deposition conditions. Deposition rates were 0.73 and 3.3 nms−1, and substrate temperature ranged from 50 to 225
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 5 (1994), S. 347-351 
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The magnetic and recording properties of CoCrTa/Cr, longitudinal, magnetic, recording media, with various Cr contents, were investigated by changing the deposition temperature, the Cr thickness and the CoCrTa thickness. The Cr content of the CoCrTa magnetic layer was varied from 10 to 14 at % Cr and the films were deposited on textured NiP/AIMg substrates by direct-current (d.c.) magnetron sputtering. Both the circumferential magnetic coercivity (H c) and the coercivity orientation ratio (Or) of the media increased as the deposition temperature increased. The optimum Cr thickness was 50 ∼ 70 nm; below this optimum value both H c and the Or were small, and above this value the Or decreased. As the CoCrTa thickness increased, the Or continuously decreased, while H c had a maximum of about 1600 Oe near the 40 nm thickness. The signal-to-noise ratio of the CoCrTa/Cr films increased as the deposition temperature, the Cr thickness and the CoCrTa thickness increased. However, the bit shift was lowest when the thicknesses of the CoCrTa and Cr layers were 50 ∼ 60 nm and 50 ∼ 70 nm, respectively. The CoCrTa magnetic films with 10 at % Cr had the highest signal to noise ratio of 33 dB and the lowest bit shift of 9 ns. Our results showed that the Or factor is an important parameter for high-performance recording characteristics as is a high H c.
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Hydrogenated microcrystalline (Μc) silicon films were prepared by plasma enhanced chemical vapour deposition using an Ar-diluted SiH4 gas at various deposition conditions. The substrate temperature and RF power were varied from 150 to 400
    Type of Medium: Electronic Resource
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