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  • 1
    Electronic Resource
    Electronic Resource
    Giant magnetoresistance in Co/Cu multilayers fabricated by focused ion-beam direct deposition (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4217-4219 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the direct deposition of patterned multilayers that exhibit giant magnetoresistance without any lithographic processes. We fabricated Co/Cu multilayers by the focused ion-beam direct deposition method and measured the magnetoresistance characteristics of the multilayers. The fabricated Co/Cu multilayers are 14×76 μm2 in size and consist of 12 layers of Co thin film with the thickness of 20 A(ring) and 11 layers of Cu thin film with the thickness of 13–22 A(ring) on the GaAs substrate. We used a 108 eV Co2+ ion beam and 54 eV Cu+ ion beam extracted from a Co–Cu–Au–Nb alloy ion source. The measured magnetoresistance ratio of giant magnetoresistance was 6.7% in the case of the Co(20 A(ring))/Cu(21 A(ring)) multilayer. Experimental results show precise controllability of the thickness and the additional capability of the focused ion-beam direct deposition method. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363299
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  • 2
    Electronic Resource
    Electronic Resource
    Transparent carbon film prepared by mass-separated negative-carbon-ion-beam deposition (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2509-2515 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A carbon film was deposited by mass-separated negative-carbon-ion-beam deposition in the energy range of 25–1000 eV. The carbon film deposited by a C− ion beam was optically transparent (the maximum optical gap was 0.96 eV) and served as an electrical insulator (the maximum electrical resistivity was 1.5×108 Ω cm). The film property strongly depended on the ion-beam energy for deposition and, the film obtained at the deposition energy of 115–215 eV was the most transparent and the best insulator. Its atomic density was also the highest and was almost the same as that of diamond. The carbon film deposited at room temperature was amorphous and showed no IR absorption. On the other hand, the film deposited at a substrate temperature of 800 °C showed graphitelike rings in reflection high-energy electron-diffraction patterns and an IR absorption such as graphite. Its electrical resistivity was much lower. The property of the film deposited by a C−2 ion beam was more strongly dependent on the ion-beam energy than that of the film deposited by the C− ion beam (the maximum optical gap was 1.44 eV, and the maximum electrical resistivity 1.8×1010 Ω cm). The surface of the film deposited by the C− or the C−2 ion beam was smooth and chemically inert.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337925
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  • 3
    Electronic Resource
    Electronic Resource
    Ion sources for industrial applications (invited) : Proceedings of the 7th international conference on ion sources (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 863-867 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The ion-source and beam-transport characteristics required for industrial application are discussed. Currently, a high-current broad ion beam extracted from multiapertures is most commonly used for large area surface modification and ion beam assisted deposition. The beam quality strongly depends on the space-charge neutrality of the ion beam and nonuniformity of plasma density as well as beam emittance. To produce selective ion species without mass separation, the electron energy for ionization or electron temperature must be controlled. Applications for negative and molecular ions are also discussed. A charging-less ion implantation technique can be realized using negative ions. With molecular ions, ultra-low-energy ion implantation is possible, as is same-depth implantation of multielements. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148610
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  • 4
    Electronic Resource
    Electronic Resource
    Negative-ion extraction of gaseous materials from a radio frequency plasma-sputter-type heavy negative-ion source : Proceedings of the 6th international conference on ion sources (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 1012-1015 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The operational characteristics of a rf plasma-sputter-type heavy negative-ion source with a feeding of O2 or SF6 gas as an ionized material together with Xe gas is presented. To obtain negative ions of chemically reactive elements, we used a material gas and a stainless-steel sputtering target instead of an oxide or fluoride sputtering target to prevent charging trouble. In the source, gas particles adsorbed on the target surface were negatively ionized by sputtering. O− or F− was dominant in the extracted beam and increased with the Cs supply until the yield was optimized. Then, high-current negative ions of mA at an intensity of several, such as 4.6 mA for O− and 4.3 mA for F−, were extracted in a dc mode of operation. Even in this plasma-sputter source with a material gas feeding, the surface production of negative ions was found to be the dominant mechanism. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146800
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  • 5
    Electronic Resource
    Electronic Resource
    Negative-ion production probability in rf plasma sputter-type heavy negative-ion source (abstract)a) : Proceedings of fifth international conference on ion sources (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 1226-1226 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have constructed a rf plasma sputter-type heavy negative ion source, which can deliver high current negative ion beams such as Cu− of 12.1 mA, Si− of 3.8 mA, and B−2 of 1 mA in dc operation mode. In our source, the estimated negative ion production probability of Cu was much more than the value obtained by the conventional negative ionization probability equation with an exponential dependence on velocity. We measured heavy negative ion production probabilities by Xe+ sputtering on various cesiated metals. The probabilities were strongly affected by the cesiated surface condition which was determined by a flux of neutral cesium supply to the surface and a target surface temperature. The measured maximum probabilities at the optimal conditions were considerably high, and they were about 10% or more for Cu, C, Si, Ge, and W targets and about 1% for Ta and Mo targets. The probability for very low velocity particles such as sputtered heavy metal atoms might be affected by a surface ionization process with a high local surface temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145014
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  • 6
    Electronic Resource
    Electronic Resource
    A negative ion beam application to artificial formation of neuron network in culture : The 8th international conference on ion sources (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 797-799 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A negative ion beam modification of the biocompatibility of polystyrene surface was investigated for the artificial formation of neuron network in culture with respect to negative ion species. Negative ions of silver, copper or carbon were implanted in nontreated polystyrene (NTPS) dishes at conditions of 20 keV and 3×1015 ions/cm2 through a mask with many slits of 60 μm in width. For the surface wettability, the contact angle of ion-implanted NTPS was about 75° for silver-negative ions, which was lower than 86° of the original NTPS. For carbon implantation, on the contrary, the contact angles did not change from the original value. In culture experiment using neuron cells of PC-12h (rat adrenal pheochromocytoma), the cells cultured with serum medium in two days showed the cell attachment and growth in number only at the ion-implanted region on NTPS for all ion species. In another two days in culture with nonserum medium including a nerve growth factor, the outgrowth of neural protrusions was also observed only at the ion-implanted region for all ion species. There was a difference in number of attached cells for ion species. The silver-negative ion-implanted NTPS had a large effect for cell attachment compared with other two ion species. This reason is considered to be due to the lowest contract angles among them. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150297
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  • 7
    Electronic Resource
    Electronic Resource
    Extraction of molecular negative-ion beams of CN from radio frequency plasma-sputter-type heavy negative ion source for negative-ion beam deposition : Proceedings of the 7th international conference on ion sources (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 884-886 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A high current CN negative-ion beam was obtained from a radio frequency plasma-sputter-type heavy negative ion source in a target-gas mode operation and CN negative-ion beam deposition was investigated. CN negative ions of 0.88 mA were safely obtained by using a carbon sputtering target and nitrogen gas instead of cyanogen for ionization. Even in this target-gas mode operation of the source with N2 gas, the work function of the sputtering target surface was effectively decreased by introducing cesium vapor so that the production of CN negative ions was remarkably enhanced. In a CN negative-ion beam deposition on silicon substrate, the nitrogen concentration in deposited layers depended on ion energy and the maximum ratio (N/C) of 0.3 was obtained at an energy of 70 eV. From a Raman spectra with these results, it was found that CN-deposited films were a diamondlike carbon film including nitrogen atoms. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148628
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  • 8
    Electronic Resource
    Electronic Resource
    Negative-ion sources for modification of materials (invited) : Proceedings of the 6th international conference on ion sources (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 1410-1415 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The properties of negative ions, such as charging–free ion implantation and new materials syntheses by pure kinetic bonding reaction, have been shown to be promising in terms of their interaction with material surfaces. However, high-current or high-brightness negative-ion sources are required for these purposes. Several kinds of sputter-type negative-ion sources have been developed for negative-ion implantation and deposition in order to obtain high-current heavy negative ions. Recently, a microwave discharge oxygen negative-ion source for negative-ion beam deposition and a surface plasma type hydrogen negative-ion source for projection ion-beam lithography have been investigated. In this article, these negative-ion sources for modification of materials are reviewed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146682
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  • 9
    Electronic Resource
    Electronic Resource
    Negative-ion production probability in rf plasma sputter-type heavy negative-ion sourcea) (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 1732-1736 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have constructed a rf plasma sputter-type heavy negative ion source, which can deliver high current negative ion beams such as Cu− of 12.1 mA, Si− of 3.8 mA, and B−2 of 1 mA in dc operation mode. In our source, the estimated negative ion production probability of Cu was much more than the value obtained by the conventional negative ionization probability equation with an exponential dependence on velocity. We measured heavy negative ion production probabilities by Xe+ sputtering on various cesiated metals. The probabilities were strongly affected by the cesiated surface condition which was determined by a flux of neutral cesium supply to the surface and a target surface temperature. The measured maximum probabilities at the optimal conditions were considerably high, and they were about 10% or more for Cu, C, Si, Ge, and W targets and about 1% for Ta and Mo targets. The probability for very low velocity particles such as sputtered heavy metal atoms might be affected by a surface ionization process with a high local surface temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145233
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  • 10
    Electronic Resource
    Electronic Resource
    Negative-ion source for implantation and surface interaction of negative-ion beams (invited) : Proceedings of the 5th international conference on ion sources (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 1290-1294 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An rf-plasma-sputter type heavy negative-ion source can deliver a few mA to 12 mA of dc negative-ion currents such as boron, carbon, silicon, and copper negative-ion beams. These negative-ion currents are comparable with the positive-ion currents for conventional high current positive-ion implantation, and thus could be newly used in place of positive ions. Surface interaction of negative-ion beams is extremely distinctive when negative ions are implanted into insulated materials or insulators. The surface charge-up voltage of insulated materials by negative-ion implantation saturates at only several volts, so that no breakdown of insulators takes place. As a whole system, a negative-ion implanter without charge neutralizer would be simpler and more economical than a positive-ion implanter.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144984
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